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首页> 外文会议>1st International Conference on Semiconductor Technology Vol.1, May 27-30, 2001, Shanghai, China >EFFECT OF MOCVD PROCESS ON TEXTURE AND DIELECTRICAL PROPERTIES OF (BA, SR)TIO_3 THIN FILMS
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EFFECT OF MOCVD PROCESS ON TEXTURE AND DIELECTRICAL PROPERTIES OF (BA, SR)TIO_3 THIN FILMS

机译：MOCVD工艺对（BA，SR）TIO_3薄膜的织构和介电性能的影响

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摘要

High dielectric constant is one of the main advantages of (Ba, Sr)TiO_3 (BSTO) for application on high-density DRAM's storage capacitors. To integrate it into the DRAM process, the BSTO thin film is usually deposited on a noble metal or noble metal oxide electrode. Continued shrinking of the memory cell requires the reduction of dielectric thickness. The dielectric constant of BSTO thin film is much less than what is in bulk material and decreases as the film thickness decreases. This paper describes the impact of the MOCVD process on the texture and the electrical properties of BSTO thin film on Pt electrode. Using MOCVD process, BSTO film with <111> grain orientation have been fabricated which show dielectric constant about 30% higher than that of <100> and <110> mixed oriented films.
机译：高介电常数是（Ba，Sr）TiO_3（BSTO）在高密度DRAM存储电容器上应用的主要优点之一。为了将其集成到DRAM工艺中，通常将BSTO薄膜沉积在贵金属或贵金属氧化物电极上。存储单元的持续缩小要求减小电介质厚度。 BSTO薄膜的介电常数远小于块状材料的介电常数，并且随着膜厚度的减小而减小。本文介绍了MOCVD工艺对Pt电极上BSTO薄膜的织构和电性能的影响。使用MOCVD工艺，已制备出具有<111>晶粒取向的BSTO薄膜，该薄膜的介电常数比<100>和<110>混合取向薄膜的介电常数高约30％。

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