Optical characteristics of InAsN/GaAs quantum dots emitting at 1.3 μm

机译：以1.3μm发射的InAsN / GaAs量子点的光学特性

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The InAsN/GaAs QDs show the narrow FWHM, strong PL and same carrier lifetime across the 1.3 μm band. This indicates that the QDs are grown in a uniform size distribution and that the nitrogen incorporation does not induce defect generation in QDs. InAsN has the lower energy gap and less strain than InAs and so the small addition of nitrogen into InAs is enough to move the emission to 1.3 μm. As a result, the present InAsN QDs on GaAs substrate emitting at 1.3 μm could be suitable for 1.3 μm laser diode.

机译：InAsN / GaAs量子点在1.3μm波段显示出较窄的FWHM，较强的PL和相同的载流子寿命。这表明量子点以均匀的尺寸分布生长，并且氮的掺入不会引起量子点中缺陷的产生。与InAs相比，InAsN的能隙更小，应变更小，因此，向InAs中少量添加氮就足以将发射光移至1.3μm。结果，在GaAs衬底上以1.3μm发射的当前InAsN QD可能适用于1.3μm激光二极管。

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来源
《2003 International Symposium on Compound Semiconductors Aug 25-27, 2003 San Diego, CA》|2003年|p.68-69|共2页
会议地点 San Diego CA(US);San Diego CA(US)
作者
Y. D. Jang; N. J. Kim; D. Lee; K. H. Park; W. G. Jeong; J. W. Jang;
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作者单位

Department of Physics, Chungnam National University, Daejeon 305-764, Korea;

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原文格式 PDF
正文语种 eng
中图分类无线电电子学、电信技术;
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1. Contactless electroreflectance investigation of energy levels in a 1.3 μm emitting laser structure with the gain medium composed of InAsN quantum dots embedded in GaInNAs/GaAs quantum wells [J] . M. Motyka, R. Kudrawiec, G. Sek, Applied Physics Letters . 2007,第22期

机译：在GaInNAs / GaAs量子阱中嵌入由InAsN量子点组成的增益介质的1.3μm发射激光器结构中能级的非接触电反射研究
2. OPTICALLY-DETECTED MICROWAVE RESONANCE IN InGaAsN/GaAs QUANTUM WELLS AND InAs/GaAs QUANTUM DOTS EMITTING AROUND 1.3 μm [J] . P. G. BARANOV, N. G. ROMANOV, V. L. PREOBRAZHENSKI, International journal of nanoscience . 2003,第6期

机译：InGaAsN / GaAs量子阱和约1.3μm的InAs / GaAs量子点中的光学检测微波共振
3. Influence of the thermal treatment on the optical and structural properties of 1.3 μm emitting quantum dots (QDs) grown by LP-MOVPE grown InAs/GaAs quantum dots [J] . G.Saint-Girons, A.Mereuta, G.Patriarche Optical Materials . 2001,第1a2期

机译：热处理对LP-MOVPE生长的InAs / GaAs量子点生长的1.3μm发射量子点（QD）光学和结构性质的影响
4. Optical characteristics of InAsN/GaAs quantum dots emitting at 1.3 /spl mu/m [C] . Jang, Y.D., Kim, . 2003

机译：以1.3 / spl mu / m发射的InAsN / GaAs量子点的光学特性
5. Optical and Mechanical Investigation of InAs /GaAs Quantum Dots Solar Cells and InAs Nanowires for the Application of Photovoltaic Device. [D] . Dai, Yushuai. 2013

机译：InAs / GaAs量子点太阳能电池和InAs纳米线在光伏器件中的应用的光学和机械研究。
6. Elimination of Bimodal Size in InAs/GaAs Quantum Dots for Preparation of 1.3-μm Quantum Dot Lasers [O] . Xiang-Bin Su, Ying Ding, Ben Ma, 2018

机译：消除用于制备1.3μm量子点激光器的InAs / GaAs量子点中的双峰尺寸
7. MBE growth optimization and optical spectroscopy of InAs/GaAs quantum dots emitting at 1.3μm in single and stacked layers [O] . V. Celibert, E. Tranvouez, G. Guillot, 2005

机译：MBE在单个和堆叠层中发射13μm的INAS / GaAs量子点的生长优化和光谱

Optical characteristics of InAsN/GaAs quantum dots emitting at 1.3 μm

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