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Automation control system of the alloying process of gallium arsenide layers growth by epitaxial technology

机译:外延技术生长砷化镓层合金化过程的自动化控制系统

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This paper proposes to control the thermal alloying process of GaAs epilayers growth by transport reaction in Ga-AsCI3-H2 system. The thermal alloying process is controlled by using the universal two-channel programmable PID-controller TRM151, which permits automatic control of complicated objects with high precision. The thermal process was identified using the parametric model ARX (Auto-Regressive eXogenous) from System Identification Toolbox from MATLAB. The experimental technologist's program contains steps of p+−po −n + photovoltaic structures achievement with damper layer on p-GaAs substrate. There is a possibility to obtain multiple periodical epitaxial layers structures with different dimensions and electro-physical properties, including nano-dimension structures, changing different steps of production. The tuning controller was performed using the maximal stability degree method. This control system minimizes the new technologies elaboration terms, accelerates the implementation of the elaborated technology in industry by reducing production costs, improving the product quality and its market competitiveness.
机译:提出了通过在Ga-AsCl 3 -H 2 体系中的传输反应来控制GaAs表层生长的热合金化过程。通过使用通用的两通道可编程PID控制器TRM151来控制热合金化过程,从而可以高精度自动控制复杂的对象。使用来自MATLAB的System Identification Toolbox的参数模型ARX(自回归异质)识别热过程。实验技术人员的程序包含p + -p o -n + 光伏结构的步骤,其中在p-GaAs衬底上具有阻尼层。有可能获得具有不同尺寸和电物理性质的多个周期性外延层结构,包括纳米尺寸结构,从而改变了不同的生产步骤。使用最大稳定度方法执行调整控制器。该控制系统通过减少生产成本,提高产品质量及其市场竞争力,最大程度地减少了新技术的详细说明,加快了详细技术在工业中的实施。

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