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首页> 外文期刊>Superconductor Science & Technology >Growth and characterization of epitaxial aluminum layers on gallium-arsenide substrates for superconducting quantum bits
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Growth and characterization of epitaxial aluminum layers on gallium-arsenide substrates for superconducting quantum bits

机译：用于超导量子位的砷化镓衬底上外延铝层的生长和表征

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The quest for a universal quantum computer has renewed interest in the growth of superconducting materials on semiconductor substrates. High-quality superconducting thin films will make it possible to improve the coherence time of superconducting quantum bits (qubits), i.e., to extend the time a qubit can store the amplitude and phase of a quantum state. The electrical losses in superconducting qubits highly depend on the quality of the metal layers the qubits are made from. Here, we report on the epitaxy of single-crystal Al (011) layers on GaAs (001) substrates. Layers with 110 nm thickness were deposited by means of molecular beam epitaxy at low temperature and monitored by in situ reflection high-energy electron diffraction performed simultaneously at four azimuths. The single-crystal nature of the layers was confirmed by ex situ high-resolution x-ray diffraction. Differential interference contrast and atomic force microscopy analysis of the sample's surface revealed a featureless surface with root mean square roughness of 0.55 nm. A detailed in situ study allowed us to gain insight into the nucleation mechanisms of Al layers on GaAs, highlighting the importance of GaAs surface reconstruction in determining the final Al layer crystallographic orientation and quality. A highly uniform and stable GaAs (001)-(2 x 4) reconstruction reproducibly led to a pure Al (011) phase, while an arsenic-rich GaAs (001)-(4 x 4) reconstruction yielded polycrystalline films with an Al (111) dominant orientation. The near-atomic smoothness and single-crystal character of Al films on GaAs, in combination with the ability to trench GaAs substrates, could set a new standard for the fabrication of superconducting qubits.
机译：对通用量子计算机的追求使人们对半导体衬底上超导材料的增长重新产生了兴趣。高质量的超导薄膜将有可能改善超导量子位（量子位）的相干时间，即延长量子位可以存储量子态的幅度和相位的时间。超导量子位中的电损耗在很大程度上取决于制造量子位的金属层的质量。在这里，我们报告在GaAs（001）衬底上的单晶Al（011）层的外延。借助分子束外延在低温下沉积厚度为110 nm的层，并通过在四个方位同时进行的原位反射高能电子衍射进行监测。通过非原位高分辨率x射线衍射确认了层的单晶性质。样品表面的微分干涉对比和原子力显微镜分析显示无特征的表面，均方根粗糙度为0.55 nm。详尽的原位研究使我们能够深入了解GaAs上的Al层的成核机理，突出了GaAs表面重建在确定最终Al层的晶体学取向和质量方面的重要性。高度均匀且稳定的GaAs（001）-（2 x 4）重建可再现地导致纯Al（011）相，而富含砷的GaAs（001）-（4 x 4）重建产生具有Al（ 111）主导取向。 GaAs上的Al膜的近原子光滑度和单晶特性，加上对GaAs衬底进行刻槽的能力，可以为超导量子比特的制造树立新的标准。

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