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Analysis of the transient radiation damage effects on electronics using irradiation experiment and model simulation

机译:使用辐射实验和模型仿真分析瞬态辐射对电子器件的损害

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In this study, it was attempted to construct damage assessment model which could systematically analyze and predict the effects on the semiconductor devices. At first, the PIN diode was designed and manufactured for both the simulation and radiation test. After that the radiation test were performed to it with Gamma-ray. Next, after inputting the pulse model similar to that used in the measurement into 3D model PIN diode with the same parameters of the process design, the behavior of the instantaneous charges which were generated inside the devices were analyzed and the output current value was simulated. The results obtained from the two processes showed the similar characteristics
机译:在本研究中,尝试构建可以系统分析和预测对半导体器件的影响的损伤评估模型。首先,针对模拟和辐射测试设计并制造了PIN二极管。之后,用伽马射线对其进行辐射测试。接下来,将与测量中使用的类似的脉冲模型输入到具有与工艺设计相同参数的3D模型PIN二极管中之后,分析了器件内部产生的瞬时电荷的行为,并模拟了输出电流值。从这两个过程获得的结果显示出相似的特征

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