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Analysis of the Transient Radiation Damage Effects on Electronics using Irradiation Experiment and Model Simulation

机译：使用辐照实验和模型模拟分析电子产品的瞬态辐射损伤效应

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In this study, it was attempted to construct damage assessment model which could systematically analyze and predict the effects on the semiconductor devices. At first, the PIN diode was designed and manufactured for both the simulation and radiation test. After that the radiation test were performed to it with Gamma-ray. Next, after inputting the pulse model similar to that used in the measurement into 3D model PIN diode with the same parameters of the process design, the behavior of the instantaneous charges which were generated inside the devices were analyzed and the output current value was simulated. The results obtained from the two processes showed the similar characteristics.

机译：在本研究中，试图构建损伤评估模型，其系统地分析和预测半导体器件的影响。首先，针对模拟和辐射测试设计和制造了引脚二极管。之后用γ射线对辐射试验进行辐射试验。接下来，在输入类似于在测量中使用的脉冲模型之后与过程设计的相同参数相同的参数，分析了在器件内部产生的瞬时电荷的行为，并模拟输出电流值。从两种过程获得的结果显示出类似的特征。

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《IEEE Nuclear Science Symposium》|2013年||共3页
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N. H. Lee; S. C. Oh; S. H. Jeong; Y. G. Hwang; H. S. Kang; N. K. Won; M. H. Cho; M. W. Lee;
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Analysis of the Transient Radiation Damage Effects on Electronics using Irradiation Experiment and Model Simulation

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