首页> 外文会议>2016 European Conference on Silicon Carbide amp; Related Materials >Susceptor coating materials applicable for SiC reactor cleaning
【24h】

Susceptor coating materials applicable for SiC reactor cleaning

机译:适用于SiC反应器清洁的基座涂层材料

获取原文
获取原文并翻译 | 示例

摘要

Summary form only given. The complete presentation was not made available for publication as part of the conference proceedings. In order to develop a cleaning process for the silicon carbide chemical vapor deposition reactor, the susceptor coating materials are developed for protecting the susceptor from the etching by chlorine trifluoride gas. The chlorine trifluoride gas does not cause a serious damage to the pyrolitic carbon film at the temperatures lower than 480 °C, at which temperature the quick and practical reactor cleaning process is expected to be possible.
机译:仅提供摘要表格。完整的演示文稿未作为会议记录的一部分公开发布。为了开发用于碳化硅化学气相沉积反应器的清洁工艺,开发了基座涂层材料以保护基座免受三氟化氯气体的蚀刻。在低于480°C的温度下,三氟化氯气体不会严重破坏热解碳膜,在该温度下,有望实现快速,实用的反应器清洁过程。

著录项

相似文献

  • 外文文献
  • 中文文献
  • 专利
获取原文

客服邮箱:kefu@zhangqiaokeyan.com

京公网安备:11010802029741号 ICP备案号:京ICP备15016152号-6 六维联合信息科技 (北京) 有限公司©版权所有
  • 客服微信

  • 服务号