Formation of basal plane dislocations introduced by collision of macrosteps on growth surface during SiC solution growth

机译：SiC溶液生长过程中，由于宏观台阶在生长表面的碰撞而引起的基面位错的形成

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Summary form only given. The complete presentation was not made available for publication as part of the conference proceedings. The relationship between surface morphology and spatial distribution of basal plane dislocations in 4H-SiC crystal grown by top-seeded solution growth on the C face was investigated by the differential interference microscopy as well as X-ray topography. Basal plane dislocations were generated at the boundaries of the domains with the different macrosteps advance directions. On the other hand, at the area where macrosteps advance to the same directions, BPDs were hardly observed. This results suggest that BPD density can be decreased by the suppression of the collision of macrosteps during the solution growth on the C face controlling the surface morphology.

机译：仅提供摘要表格。完整的演示文稿未作为会议记录的一部分公开发布。用微分干涉显微镜和X射线形貌研究了C面上种顶溶液生长所生长的4H-SiC晶体的表面形态与基面位错空间分布之间的关系。在具有不同宏步前进方向的区域的边界处产生了基面位错。另一方面，在宏步向相同方向前进的区域，几乎没有观察到BPD。该结果表明，可以通过在控制表面形态的C面上溶液生长期间抑制宏台阶的碰撞来降低BPD密度。

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来源
《2016 European Conference on Silicon Carbide amp; Related Materials》|2016年|1-1|共1页
会议地点 Halkidiki(GR)
作者
T. Hori; K. Murayama; S. Harada; S. Xiao; M. Tagawa; T. Ujihara;
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作者单位

Department of Materials Science and Engineering, Nagoya University, Furo-cho, Chikusa-ku, Nagoya 464-8603, Japan;

Center for Integrated Research of Future Electronics (CIRFE), Institute of Materials and Systems for Sustainability (IMaSS), Nagoya University, Furo-cho, Chikusa-ku, Nagoya 464-8603, Japan;

Department of Materials Science and Engineering, Nagoya University, Furo-cho, Chikusa-ku, Nagoya 464-8603, Japan;

Department of Materials Science and Engineering, Nagoya University, Furo-cho, Chikusa-ku, Nagoya 464-8603, Japan;

Department of Materials Science and Engineering, Nagoya University, Furo-cho, Chikusa-ku, Nagoya 464-8603, Japan;

Department of Materials Science and Engineering, Nagoya University, Furo-cho, Chikusa-ku, Nagoya 464-8603, Japan;

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会议组织
原文格式 PDF
正文语种 eng
中图分类
关键词
Silicon carbide; Crystals; Face; Surface morphology; Surface topography; Morphology; Graphite;

机译：碳化硅;晶体;表面;表面形态;表面形貌;形态学;石墨;

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专利

1. Formation of Basal Plane Dislocations Introduced by Collision of Macrosteps on Growth Surface during SiC Solution Growth [J] . T. Hori, K. Murayama, S. Harada, Materials science forum . 2017,第期

机译：SiC溶液生长过程中生长表面宏观台阶碰撞引起的基面位错形成
2. Evaluation of Basal Plane Dislocation Behavior in the Epitaxial Layer on a 4H-SiC Wafer Fabricated by the Solution Growth Method [J] . Kazuaki Seki, Kazuhiko Kusunoki, Shinsuke Harada, Materials science forum . 2019,第期

机译：通过溶液生长方法制造的4H-SiC晶片在外延层中基底平面位错行为的评价
3. Conversion of basal plane dislocations to threading edge dislocations in growth of epitaxial layers on 4H-SiC substrates with a vicinal off-angle [J] . Keiko Masumoto, Sachiko Ito, Hideto Goto, Materials science forum . 2014,第pta1期

机译：4H-SiC衬底上具有邻角倾斜的外延层生长过程中基面位错向螺纹边缘位错的转换
4. Formation of basal plane dislocations introduced by collision of macrosteps on growth surface during SiC solution growth [C] . T. Hori, K. Murayama, S. Harada, European Conference on Silicon Carbide Related Materials . 2016

机译：在SiC溶液生长期间，通过癌症对生长表面碰撞引入的基底平面脱位
5. Growth of low basal plane dislocation density epilayers of 4H-silicon carbide for stable bipolar diodes. [D] . Zhang, Zehong. 2005

机译：用于稳定双极二极管的4H-碳化硅的低基面位错密度外延层的生长。
6. Analysis of the Basal Plane Dislocation Density and Thermomechanical Stress during 100 mm PVT Growth of 4H-SiC [O] . Johannes Steiner, Melissa Roder, Binh Duong Nguyen, 2019

机译：4H-SiC 100 mm PVT生长过程中基面位错密度和热机械应力分析
7. Analysis of the Basal Plane Dislocation Density and Thermomechanical Stress during 100 mm PVT Growth of 4H-SiC [O] . Johannes Steiner, Melissa Roder, Binh Duong Nguyen, 2019

机译：基底平面位错密度和热机械应力在100 mm PVT生长期间的4H-SIC期间

Formation of basal plane dislocations introduced by collision of macrosteps on growth surface during SiC solution growth

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