The influence of low-energy proton irradiaiton on threshold voltage and tranconductance of nanowire SOI n and p-channel transistors

机译：低能质子辐照对纳米线SOI n和p沟道晶体管的阈值电压和跨导的影响

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The goal of this work is analyze for the first time the low-energy proton irradiation elfects on p and n-channel SOI Ω - Gate Nanowire transistors for total ionization dose of 500 krad. After radiation, it is noticed a slight variation on a drain current and in a transconductance, for large devices, due to the back leakage current.

机译：这项工作的目标是首次分析低能量质子辐照对p和n沟道SOIΩ-门纳米线晶体管的总电离剂量为500 krad的影响。辐射后，对于大型设备，由于回漏电流，注意到漏极电流和跨导略有变化。

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来源
《2017 32nd Symposium on Microelectronics Technology and Devices》|2017年|1-4|共4页
会议地点 Fortaleza(BR)
作者
Fernando F. Teixeira; Paula G. D. Agopian; Sylvain Barraud; Maud Vinet; Olivier Faynot; Joao A. Martino;
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作者单位

LSI/PSI/USP, University of Sao Paulo, Sao Paulo, Brazil;

LSI/PSI/USP, University of Sao Paulo, Sao Paulo, Brazil;

CEA, LETI, Minatec Campus and University Grenoble Alpes, Grenoble, France;

CEA, LETI, Minatec Campus and University Grenoble Alpes, Grenoble, France;

CEA, LETI, Minatec Campus and University Grenoble Alpes, Grenoble, France;

LSI/PSI/USP, University of Sao Paulo, Sao Paulo, Brazil;

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原文格式 PDF
正文语种 eng
中图分类
关键词
Logic gates; Radiation effects; Protons; Transistors; Threshold voltage; Transconductance; Ionization;

机译：逻辑门;辐射效应;质子;晶体管;阈值电压;跨导;电离;;

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1. The Influence of Constructive Parameters on the Threshold Voltage of Nanodimensional p-Channel SOI MOS Transistors [J] . B. K. Petrov, A. A. Krasnov Russian Microelectronics . 2012,第7期

机译：构造参数对纳米p沟道SOI MOS晶体管阈值电压的影响
2. Controlling the threshold voltage of SnO2 nanowire transistors with dual in-plane-gate structures gated by chitosan proton conductors [J] . Liu Huixuan, Tan Rongri Japanese journal of applied physics . 2017,第5期

机译：用壳聚糖质子导体选通双平面栅结构的SnO2纳米线晶体管的阈值电压
3. Influence of H_2O and O_2 on threshold voltage shift in organic thin-film transistors: Deprotonation of SiOH on SiO_2 gate-insulator surface [J] . Daisuke Kumaki, Tokiyoshi Umeda, Shizuo Tokito Applied Physicsletters . 2008,第9期

机译：H_2O和O_2对有机薄膜晶体管阈值电压漂移的影响：SiO_2栅绝缘体表面上的SiOH去质子化
4. The influence of low-energy proton irradiaiton on threshold voltage and tranconductance of nanowire SOI n and p-channel transistors [C] . Fernando F. Teixeira, Paula G. D. Agopian, Sylvain Barraud, Symposium on Microelectronics Technology and Devices . 2017

机译：低能量质子辐射蚀对纳米线SOI N和P沟道晶体管阈值电压和牵制影响的影响
5. Near Zero Sub-threshold Swing Nano-Electro-Mechanical Field Effect Transistor with Suspended Germanium/Silicon Core/Shell Nanowire Channel. [D] . Kim, Ji Hun. 2013

机译：带有悬浮的锗/硅芯/壳纳米线通道的接近零亚阈值摆幅的纳米机电磁场效应晶体管。
6. Effects of Applied Voltages on the Charge Transport Properties in a ZnO Nanowire Field Effect Transistor [O] . Jongwon Yoon, Fu Huang, Ki Hoon Shin, 2020

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7. MODELING AND PSPICE SIMULATION OF RADIATION STRESS INFLUENCE ON THRESHOLD VOLTAGE SHIFTS IN P-CHANNEL POWER VDMOS TRANSISTORS [O] . Miloš Marjanović, Danijel Danković, Vojkan Davidović, 2016

机译：辐射应力影响对P沟道功率VDMOS晶体管阈值电压影响的建模与PSPICE模拟
8. Gamma, electron, and proton radiation exposures of P-channel, enhancement, metal oxide semiconductor, field effect transistors [R] . Wannemacher, H. E. 1965

机译：G沟道，电子辐射和质子辐射暴露于p沟道，增强，金属氧化物半导体，场效应晶体管

The influence of low-energy proton irradiaiton on threshold voltage and tranconductance of nanowire SOI n and p-channel transistors

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