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首页> 外文会议>2017 7th International Conference on Integrated Circuits, Design, and Verification >Current status and prospect for EUV lithography
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Current status and prospect for EUV lithography

机译：EUV光刻技术的现状与前景

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Extreme ultraviolet (EUV) lithography which can utilize the single resist process is the most promising lithographic technology for semiconductor electronic devices such as MPU, memory. In the International Electron Device Meeting (IEDM) 2016 which was held in San Francisco, as the fabrication of ULSIs which are going to use for the future Internet of Things (IoT) requires the low cost and low power consumption devices, using the single resist process in high volume manufacturing is strongly required. The technical issues of EUV lithography for high volume manufacturing are 1) EUV light source, 2) EUV resist development, 3) EUV pellicle, and 4) defect free EUV mask development. EUVL is planned to be inset into high volume manufacturing from 2019. Recently, ASML demonstrated EUV LPP source power of 250 W at intermediate focal point, and adapting to NxE-3400B EUV exposure system, 12 inches wafer throughput of 125 wafers per hour is achieved. The current status of and prospect for EUVL will be introduced and discussed.
机译：可以利用单抗蚀剂工艺的极紫外（EUV）光刻技术是用于MPU，存储器等半导体电子设备的最有前途的光刻技术。在旧金山举行的2016年国际电子设备会议（IEDM）上，制造用于未来物联网（IoT）的ULSI需要使用单一抗蚀剂的低成本和低功耗设备强烈要求在大批量生产中使用该工艺。用于大批量生产的EUV光刻技术存在以下问题：1）EUV光源； 2）EUV抗蚀剂显影； 3）EUV防护膜；以及4）无缺陷的EUV掩模显影。 EUVL计划从2019年开始投入批量生产。最近，ASML在中间焦点展示了250 W的EUV LPP源功率，并适应NxE-3400B EUV曝光系统，实现了12英寸晶圆每小时125个晶圆的生产能力。将介绍和讨论EUVL的现状和前景。

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