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首页> 外文会议>2017 Intl Conf on Advanced Control Circuits Systems amp; 2017 Intl Conf on New Paradigms in Electronics amp; Information Technology >Low power memristor based voltage controlled oscillator for electrical neural stimulation
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Low power memristor based voltage controlled oscillator for electrical neural stimulation

机译：基于低功率忆阻器的压控振荡器，用于神经电刺激

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摘要

Neural stimulation is one of the most important stimulations in biomedical engineering because it is used to treat the chronic pain such as Parkinson's disease. The main challenge in designing a very low frequency oscillator is the large physical dimensions of the passive elements used in the circuit that occupy large Silicon area. Therefore, the memristor can be used instead of resistance to decrease the Silicon area and to achieve low power consumption. That is because the memristor has two important advantages to be used in the voltage controlled oscillator design for electrical neural stimulation which are: (1) nano scale dimensions and (2) low power consumption. This paper presents a memristor based new voltage controlled oscillator for electrical neural stimulation. The proposed circuit generates low frequency range from 104 Hz to 203 Hz with low power consumption equal 0.79 mW which is the main challenge in deep brain stimulators and the total Silicon area is 0.67 mm2.
机译：神经刺激是生物医学工程中最重要的刺激之一，因为它用于治疗慢性疼痛，如帕金森氏病。设计超低频振荡器的主要挑战是电路中使用的无源元件的物理尺寸较大，它们占据了较大的硅面积。因此，可以使用忆阻器代替电阻来减小硅面积并实现低功耗。这是因为忆阻器具有用于电神经刺激的压控振荡器设计中使用的两个重要优点，它们是：（1）纳米级尺寸和（2）低功耗。本文提出了一种基于忆阻器的新型压控振荡器，用于电神经刺激。该电路产生的低频范围为104 Hz至203 Hz，功耗低至0.79 mW，这是深部脑刺激器面临的主要挑战，总硅面积为0.67 mm 2 。

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