首页> 外文会议>2nd Italian Conference on Sensors and Microsystems Artificial and Natural Perception Rome, Italy 3-5 February 1997 >Controlled Growth and Microstructural Evolution of WO_3 Thin Films on SiO_2 and Si_3N_4 Substrates
【24h】

Controlled Growth and Microstructural Evolution of WO_3 Thin Films on SiO_2 and Si_3N_4 Substrates

机译:SiO_2和Si_3N_4衬底上WO_3薄膜的受控生长和微观结构演变

获取原文
获取原文并翻译 | 示例

摘要

Tungsten trioxide (WO_3) thin films were thermally evaporated on polycristalline SiO_2, Si_3N_4 substrates and annealed at 500 deg C for 6, 12, 24, 96 and 192 hours in static air. XRD and AFM analysis on the annealed have shown that the growth of the crystallites size is almost ended after 192 hours of annealing, while the mean surface roughness and surface area are increasing function of the annealing time. These preliminary results highlight that slow microstructural rearrangements of the films are not completed even after 196 hours of annealing and 500deg C. Pre ageing thermal conditioning of the films are required in order to stabilise the microstructural and eventually the electrical properties of the materials before practical operation.
机译:将三氧化钨(WO_3)薄膜在多晶体SiO_2,Si_3N_4衬底上热蒸发,并在500摄氏度的静态空气中退火6、12、24、96和192小时。对退火的XRD和AFM分析表明,微晶尺寸的增长在退火192小时后几乎结束,而平均表面粗糙度和表面积是退火时间的函数。这些初步结果表明,即使经过196个小时的退火和500摄氏度,薄膜的缓慢微结构重新排列仍无法完成。为了使材料的微结构以及最终的电性能稳定,在实际操作之前,需要对其进行预时效热调节。

著录项

相似文献

  • 外文文献
  • 中文文献
  • 专利
获取原文

客服邮箱:kefu@zhangqiaokeyan.com

京公网安备:11010802029741号 ICP备案号:京ICP备15016152号-6 六维联合信息科技 (北京) 有限公司©版权所有
  • 客服微信

  • 服务号