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Controlled Growth and Microstructural Evolution of WO_3 Thin Films on SiO_2 and Si_3N_4 Substrates

机译:SiO_2和Si_3N_4基板上WO_3薄膜的受控生长和微观结构演化

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Tungsten trioxide (WO_3) thin films were thermally evaporated on polycristalline SiO_2, Si_3N_4 substrates and annealed at 500 deg C for 6, 12, 24, 96 and 192 hours in static air. XRD and AFM analysis on the annealed have shown that the growth of the crystallites size is almost ended after 192 hours of annealing, while the mean surface roughness and surface area are increasing function of the annealing time. These preliminary results highlight that slow microstructural rearrangements of the films are not completed even after 196 hours of annealing and 500deg C. Pre ageing thermal conditioning of the films are required in order to stabilise the microstructural and eventually the electrical properties of the materials before practical operation.
机译:钨三氧化物(WO_3)薄膜在多晶SiO_2,Si_3N_4底物上热蒸发,并在静态空气中以500℃的500℃再燃6,12,24,96和192小时。 对退火的XRD和AFM分析表明,结晶尺寸的生长几乎在192小时退火后结束,而平均表面粗糙度和表面积正在增加退火时间的函数。 这些初步结果突出显示薄膜的慢微观结构重排,即使在退火196小时后也没有完成,并且需要500℃。需要薄膜的预测热调节,以稳定微观结构,最终在实际操作之前的材料的电性能 。

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