PHOTOLUMINESCENCE MEASUREMENTS OF ZnO HETEROSTRUCTURES

机译：ZnO异质结结构的光致发光测量

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ZnO thin films were grown on TbAlO_3 single crystal substrates by pulsed laser deposition. In photoluminescence (PL) measurements, strong emissions from TbAlO_3 were observed with the emission from ZnO when the film thickness was less than 100nm. The relationship between the ZnO film thickness and the emission intensity from TbAlO_3 was investigated in order to determine the penetration depth of excitation light. Information on the heterostructures ranging from the surface to a depth of 300nm was obtained by PL measurements in this study, and the absorption coefficient for a wavelength of 325nm was estimated to be 1.31 x10~5 cm~(-1).

机译：通过脉冲激光沉积在TbAlO_3单晶衬底上生长ZnO薄膜。在光致发光（PL）测量中，当膜厚度小于100nm时，观察到TbAlO_3产生强发射，而ZnO产生发射。为了确定激发光的穿透深度，研究了ZnO膜厚度与TbAlO_3的发射强度之间的关系。本研究通过PL测量获得了从表面到300nm深度的异质结构信息，对325nm波长的吸收系数估计为1.31 x10〜5 cm〜（-1）。

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来源
《The 3rd International Symposium on Material Chemistry in Nuclear Environment (Material Chemistry '02 MC'02) Mar 13-15, 2002 Tsukuba》|2002年|p.257-261|共5页
会议地点 Tsukuba(JP);Tsukuba(JP);Tsukuba(JP)
作者
Yutaka Adachi; Haruki Ryoken; Isao Sakaguchi; Naoki Ohashi; Hajime Haneda; Tadashi Takenaka;
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作者单位

Advanced Materials Laboratory, National Institute for Materials Science, 1-1 Namiki, Tsukuba, Ibaraki 305-0044, Japan;

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会议组织
原文格式 PDF
正文语种 eng
中图分类原子能技术;
关键词
ZnO; TbAlO_3; heterostructure; ceramics integration; photoluminescence; absorption coefficient;

机译：ZnO; TbAlO_3;异质结构;陶瓷积分;光致发光;吸收系数;

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专利

1. Photoluminescence Measurements of ZnO/TbAlO_3 Heterostructures [J] . Yutaka Adachi, Haruki Pyoken, Isao Sakaguchi, 日本セラミックス協会学術論文誌 . 2002,第1281期

机译：ZnO / TbAlO_3异质结构的光致发光测量
2. Structural and photoluminescence properties of ZnO nanorods grown on ion-plated Ga-doped ZnO seed layers by chemical bath deposition and fabrication of poly(3,4-ethylenedioxythiophene) poly(styrenesulfonate)/ZnO nanorods heterostructures [J] . Terasako Tomoaki, Obara Shohei, Yagi Masakazu, Thin Solid Films . 2019,第MAYa1期

机译：离子镀Ga掺杂的ZnO种子层上通过化学浴沉积和制备的聚（3,4-乙撑二氧噻吩）聚（苯乙烯磺酸盐）/ ZnO纳米棒异质结构生长的ZnO纳米棒的结构和光致发光特性
3. Improved Crystalline Structure and Enhanced Photoluminescence of ZnO Nanolayers in Bi2Se3/ZnO Heterostructures [J] . Baitimirova Margarita, Andzane Jana, Viter Roman, The journal of physical chemistry, C. Nanomaterials and interfaces . 2019,第51期

机译：改进的晶体结构和增强ZnO纳米层的显着光致发光在Bi2Se3 / ZnO异质结构中
4. Photoluminescence measurements of ZnO heterostructures [C] . Yutaka Adachi, Haruki Ryoken, Isao Sakaguchi International Symposium on Material Chemistry in Nuclear Environment . 2003

机译：ZnO异质结构的光致发光测量
5. Growth of Zn-Polar BeMgZnO/ZnO Heterostructure with Two Dimensional Electron Gas (2DEG) and Fabrication of Silver Schottky Diode on BeMgZnO/ZnO Heterostructure [D] . Ullah, Md Barkat 2017

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6. Enhanced band-edge photoluminescence from ZnO-passivated ZnO nanoflowers by atomic layer deposition [O] . Zhi Wei Ai, Yun Wu, Hao Wu, 2013

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7. Enhanced Photostability and Photoluminescence of PbI 2 via Constructing Type‐I Heterostructure with ZnO [O] . Jixiu Li, Yuanzheng Li, Weizhen Liu, 2021

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8. Transient Photoluminescence Measurements on GaAs and AlGaAs Double Heterostructures. [R] . Halle, L. F., Moss, S. C., Marvin, D. C. 1993

机译：Gaas和alGaas双异质结构的瞬态光致发光测量。

PHOTOLUMINESCENCE MEASUREMENTS OF ZnO HETEROSTRUCTURES

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