NEW DEVELOPMENTS IN SILICON AND OXIDE ICP ETCHING FOR MEMS

机译：MEMS硅和氧化物ICP蚀刻的新发展

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The subject of the presentation will be Alcatel's latest developments in deep silicon and oxidernetching for MEMS fabrication using an ICP system.rnThe obtained results of the study to eliminate the ARDE effect (Aspect Ratio DependentrnEtching), also called RIE lag, will be discussed.rnResults will be presented showing less than 1% etch depth variation between 10m and 200rnfn width silicon structures while maintaining excellent uniformity.rnAlcatel's new deep oxide etching ICP tool AMS 200 DE (Dielectric Etcher) has beenrnspecifically designed for deep oxide etching in MEMS & MOEMS application, so to meet therntypical etch requirements of SiO2, quartz and other glass-like materials.rnOutstanding etch results will be presented, including very high selectivity up to 30:1 tornPhotoresist Mask, with high SiO2 Etch Rate up to 0.5 m /min with excellent uniformity (

机译：演讲的主题将是阿尔卡特在使用ICP系统制造MEMS的深硅和深氧化处理方面的最新进展。rn将讨论消除ARDE效应（纵横比相关蚀刻）的研究获得的结果，也称为RIE滞后。将展示在10m和200rnfn宽度的硅结构之间蚀刻深度变化小于1％的同时保持出色的均匀性。阿尔卡特的新型深氧化蚀刻ICP工具AMS 200 DE（Dielectric Etcher）专为MEMS和MOEMS应用中的深氧化蚀刻而设计，因此将满足杰出的蚀刻结果，包括高达30：1撕裂的光致抗蚀剂掩模的极高选择性，具有高达0.5 m / min的SiO2蚀刻速率和出色的均匀性（

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《8th International conference on commercialization of micro and nano systems (COMS 2003)》|2003年|201|共1页
会议地点 Amsterdam(NL);Amsterdam(NL)
作者
M.Puech; N.Launay; N.Arnal; L.Rolland; P. Dijkstra;
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phone: +33 4 50 65 79 19;

rnphone: +33 4 50 65 79 39;

rnphone: +33 4 50 65 74 03;

rnphone: +33 4 50 65 79 87;

rnphone: + 31 30 635 59 43 / Peter.Dijkstra@avt.alcatel.nl;

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NEW DEVELOPMENTS IN SILICON AND OXIDE ICP ETCHING FOR MEMS

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