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Photon-timing jitter dependence on the injection position in Single-Photon Avalanche Diodes

机译:单光子雪崩二极管中光子定时抖动对注入位置的依赖性

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In recent years a growing number of applications demands always better timing resolution for Single Photon Avalanche Diodes. The challenge is pursuing the improved timing resolution without impairing the other device characteristics such as quantum efficiency and dark counts. This task requires a clear understanding of the physical mechanisms necessary to drive the device engineering process.rnPast studies state that in Si-SPADs the avalanche injection position statistics is the main contribution to the photon-timing jitter. However, in recent re-engineered devices, this assumption is questioned. For the purpose of assessing for good this contribution we developed an experimental setup in order to characterize the photon-timing jitter as a function of the injection position by means of TCSPC measurements with a laser focused on the device active area. Results confirmed not only that the injection position is not the main contribution to the photon-timing jitter but also evidenced a radial dependence never observed before. Furthermore we found a relation between the photon-timing jitter and the specific resistance of the devices. To characterize the resistances we studied the avalanche current density distribution in the device active area by imaging the photo-luminescence due to hot-carrier emission.
机译:近年来,越来越多的应用要求单光子雪崩二极管始终具有更好的时序分辨率。挑战在于追求改进的时序分辨率,同时又不损害其他器件的特性,例如量子效率和暗计数。这项任务需要清楚地了解驱动器件工程过程所必需的物理机制。rn过去的研究表明,在Si-SPAD中,雪崩注入位置统计是对光子定时抖动的主要贡献。然而,在最近重新设计的设备中,这一假设受到质疑。为了很好地评估这一贡献,我们开发了一个实验装置,以便利用TCSPC测量(聚焦在器件有源区域上)通过TCSPC测量来表征光子定时抖动随注入位置的变化。结果证实,不仅注入位置不是对光子定时抖动的主要贡献,而且还证明了以前从未观察到的径向依赖性。此外,我们发现了光子定时抖动与器件的比电阻之间的关系。为了表征电阻,我们通过对由于热载流子发射引起的光致发光进行成像,研究了器件有源区域中的雪崩电流密度分布。

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