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首页> 外文期刊>Quantum Electronics, IEEE Journal of >Photon-Timing Jitter Dependence on Injection Position in Single-Photon Avalanche Diodes
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Photon-Timing Jitter Dependence on Injection Position in Single-Photon Avalanche Diodes

机译：单光子雪崩二极管中光子定时抖动取决于注入位置

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In recent years, a growing number of applications demand better timing resolution from single-photon avalanche diodes (SPADs). The challenge is pursuing improved timing resolution without impairing other device characteristics such as quantum efficiency and dark count rate. This task requires a clear understanding of the statistical phenomena involved in the avalanche current growth in order to drive the device engineering process. Past studies state that in Si SPADs the avalanche injection position statistics is the main contribution to the photon-timing jitter. However, in recent re-engineered devices, this assumption has been questioned. To address this issue, we developed an experimental setup capable of characterizing the photon-timing jitter as a function of the injection position by means of a laser focused on the device active area. The results not only confirmed that the injection position statistics is not the main contribution to photon-timing jitter, but also evidenced interesting dependences of the timing performances on the injection position. Furthermore, we found a relationship between the photon-timing jitter and the specific resistance of the devices, which has been investigated by means of photoluminescence measurements.
机译：近年来，越来越多的应用要求单光子雪崩二极管（SPAD）具有更好的时序分辨率。面临的挑战是在不损害其他器件特性（例如量子效率和暗计数率）的情况下追求更高的时序分辨率。此任务需要对雪崩电流增长中涉及的统计现象有清楚的了解，以驱动器件工程过程。过去的研究表明，在Si SPAD中，雪崩注入位置统计是对光子定时抖动的主要贡献。然而，在最近重新设计的设备中，这一假设受到质疑。为了解决这个问题，我们开发了一种实验装置，该装置能够通过聚焦在器件有源区域上的激光来表征光子定时抖动随注入位置的变化。结果不仅证实了注入位置统计信息不是对光子定时抖动的主要贡献，而且还证明了定时性能对注入位置的有趣依赖性。此外，我们发现了光子定时抖动与器件的电阻率之间的关系，已通过光致发光测量对其进行了研究。

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