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首页> 外文会议>Advances in electroceramic materials >ELECTRICAL CHARACTERIZATION AND DIELECTRIC RELAXATION OF AU/POROUS SILICON CONTACTS
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ELECTRICAL CHARACTERIZATION AND DIELECTRIC RELAXATION OF AU/POROUS SILICON CONTACTS

机译：金/多孔硅触点的电特性和介电松弛

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摘要

The DC and AC electrical characterization of Au/porous silicon contacts in room temperature is presented. The Porous Silicon layers were prepared by electrochemical etching in p-type silicon <100> substrates. The DC resistances were studied and the AC electrical measurements were performed from 5 Hz to 10 MHz, for the four samples at 0V. We found two behaviours typical of the dielectric permittivity property of samples studied; i) the regimen of strong dispersion present at low frequency and ii) the relaxation region that dominates at high frequency. An electrical equivalent circuit was proposed to fit the experimental frequency response of the different samples. We have obtained various model parameter values fitting corresponding Au/PS structures fabricated under different process conditions.
机译：介绍了室温下金/多孔硅触点的直流和交流电特性。通过在p型硅<100>衬底中的电化学蚀刻来制备多孔硅层。对于四个电压为0V的样品，研究了直流电阻，并在5 Hz至10 MHz范围内进行了交流电测量。我们发现了所研究样品的介电常数特性的两种典型行为： i）低频时出现强分散的方案，ii）高频时占主导地位的松弛区域。提出了等效电路，以适应不同样品的实验频率响应。我们已经获得了适合在不同工艺条件下制造的相应Au / PS结构的各种模型参数值。

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  • 来源
  • 会议地点 Pittsburgh PA(US);Pittsburgh PA(US)
  • 作者

    M. Chavarria; F. Fonthal;

  • 作者单位

    Advanced Materials for Micro and Nanotcchnology Research Group Facultad de Ingenieria, Universidad Autonoma de Occidente Km. 2 via Cali - Jamundi, Vallc del Lili, Cali, Colombia;

    Advanced Materials for Micro and Nanotcchnology Research Group Facultad de Ingenieria, Universidad Autonoma de Occidente Km. 2 via Cali - Jamundi, Vallc del Lili, Cali, Colombia;

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  • 正文语种 eng
  • 中图分类 绝缘材料、电介质及其制品;
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