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首页> 外文会议>Advances in Resist Technology and Processing XXIII pt.1 >SILICON CONTAINING POLYMER IN APPLICATIONS FOR 193 NM HIGH NA LITHOGRAPHY PROCESSES
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SILICON CONTAINING POLYMER IN APPLICATIONS FOR 193 NM HIGH NA LITHOGRAPHY PROCESSES

机译：193 NM高NA光刻工艺应用中的含硅聚合物。

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The ability to extend 193 nm lithography resolution depends on increasing the numerical aperture (NA) of the exposure system, resulting in smaller depth of focus, which subsequently requires use of thinner photoresists. Bottom antireflective coatings (BARCs) are a necessity, but the organic composition of current 193 nm BARCs offers poor etch selectivity to the photoresist. As a result, image transfer with thin resists is becoming increasingly difficult. It is also more challenging to control reflectivity at high numerical apertures with a thin, single layer BARC. To address these issues, IBM has developed a new class of silicon containing BARCs. These materials exhibit high etch selectivity that will significantly improve the performance of high NA 193 nm lithography. The incorporation of silicon in the backbone of the polymers comprising these BARCS affords a high etch selectivity to conventional organic resists and therefore these polymers can be used as thick planarizing BARCs. The optical constants of these BARCs have been tuned to provide good reflectivity control at NA > 1.2 These materials can also be used as part of a dual layer BARC scheme composed of the thin organosilicon based BARC coated over a planarizing organic underlayer. This scheme has also been optically tuned to provide reflectivity suppression at high incident angles. By utilizing a thick BARC, a novel contact hole shrink process is enabled that allows tapering of the sidewall angle and controlling the post-etch critical dimension (CD) bias. Structures of the silicon containing polymer, formulation chemistry, optical tunability, lithography at high NA and RIE pattern transfer are reported.
机译：扩展193 nm光刻分辨率的能力取决于增加曝光系统的数值孔径（NA），从而导致更小的聚焦深度，这随后需要使用更薄的光刻胶。底部抗反射涂层（BARC）是必需的，但是当前193 nm BARC的有机成分对光致抗蚀剂的蚀刻选择性较差。结果，使用薄抗蚀剂的图像转印变得越来越困难。用薄的单层BARC控制高数值孔径的反射率也更具挑战性。为了解决这些问题，IBM开发了一种新型的含硅BARC。这些材料具有很高的刻蚀选择性，可以显着提高高NA 193 nm光刻的性能。硅在包含这些BARCS的聚合物主链中的引入提供了对常规有机抗蚀剂的高蚀刻选择性，因此这些聚合物可用作厚的平面化BARC。这些BARC的光学常数已经过调整，可以在NA> 1.2时提供良好的反射率控制。这些材料也可以用作双层BARC方案的一部分，该方案由涂覆在平坦化有机底层上的基于有机硅的薄BARC组成。还对该方案进行了光学调谐，以在高入射角下提供反射率抑制。通过利用厚的BARC，可以实现新颖的接触孔收缩工艺，该工艺允许逐渐减小侧壁角度并控制蚀刻后的临界尺寸（CD）偏压。报告了含硅聚合物的结构，配方化学，光学可调性，高NA和RIE图案转移时的光刻。

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