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首页> 外文会议>Advances in Resist Technology and Processing XXIII pt.1 >Top Barrier Coating Materials for Immersion Lithography and Beyond
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Top Barrier Coating Materials for Immersion Lithography and Beyond

机译：浸没式光刻及其他以外的顶级阻隔涂料

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摘要

Immersion barrier coats were formulated and evaluated on ArF photoresist in view of interaction between photoresist and top coats. Acrylate polymers having an acid-labile protecting group, an acid group, and a polar group were synthesized to realize water barrier property and developability. To compensate the insufficient developability, thermal acid generator was included as an additive that can enhance the developability of the aery late top coats by post exposure bake. In the course of the material evaluation, it became evident that carboxyl acid group in the top coat base polymers has great influence on photoresist profiles, and this result was fedback to a new acid group, deuterated carboxyl acid, that is suitable for both ArF wavelength and EUV wavelength. When top coat materials having deuterated carboxyl acid were applied on ArF photoresist, fine pattern profiles were confirmed. Further, an extension of barrier coating concept to EUV lithography as outgas barrier coats was examined on an EUV photoresists test sample. These outgas barrier coat materials do not include fluorine atoms, therefore, achieves good transparency at EUV wavelength.
机译：考虑到光致抗蚀剂和面涂层之间的相互作用，在ArF光致抗蚀剂上配制并评估了浸入阻挡涂层。合成具有酸不稳定的保护基，酸基和极性基团的丙烯酸酯聚合物，以实现阻水性和显影性。为了补偿不足的显影性，包括热产酸剂作为添加剂，该添加剂可以通过曝光后烘烤来增强琥珀色底漆的显影性。在材料评估过程中，显而易见的是，面漆基础聚合物中的羧基对光致抗蚀剂的轮廓有很大影响，并且该结果被反馈到一个新的酸基，氘代的羧酸，适用于两个ArF波长和EUV波长。当将具有氘化羧酸的面漆材料涂覆在ArF光致抗蚀剂上时，确认到精细的图案轮廓。此外，在EUV光刻胶测试样品上检查了将隔离涂层的概念扩展到EUV光刻作为废气隔离涂层的方法。这些排气阻隔涂层材料不包含氟原子，因此在EUV波长下具有良好的透明度。

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