REBL: design progress toward 16 nm half-pitch maskless projection electron beam lithography

机译：REBL：朝16 nm半间距无掩模投影电子束光刻的设计进展

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REBL (Reflective Electron Beam Lithography) is a novel concept for high speed maskless projection electron beamlithography. Originally targeting 45 nm HP (half pitch) under a DARPA funded contract, we are now working onoptimizing the optics and architectu

机译：REBL（反射电子束光刻）是一种用于高速无掩模投影电子束光刻的新颖概念。根据DARPA资助的合同，最初的目标是45 nm HP（半间距），现在我们正在努力优化光学和架构。

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来源
《Alternative lithographic technologies IV.》|2012年|P.11.1-11.11|共11页
会议地点 San Jose CA(US)
作者
Mark A. McCord; Paul Petric; Upendra Ummethala; Allen Carroll; Shinichi Kojima; Luca Grella; Sameet Shriyan; Chris F. Bevis;
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作者单位

KLA-Tencor Corp. (United States);

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会议组织
原文格式 PDF
正文语种 eng
中图分类微电子学、集成电路（IC）;微电子学、集成电路（IC）;
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专利

1. Rebl: A Novel Approach To High Speed Maskless Electron Beam Direct Write Lithography [J] . Paul Petric, Chris Bevis, Allen Carroll, Journal of Vacuum Science & Technology. B, Microelectronics and Nanometer Structures . 2009,第1期

机译：Rebl：高速无掩模电子束直接写入光刻的新方法
2. Theoretical study on relationship between exposure pattern width and chemical gradient of 16nm half-pitch line-and-space patterns in electron beam lithography used for photomask and nanoimprint mold production [J] . Kozawa Takahiro, Yoshitake Shusuke Japanese journal of applied physics . 2017,第7期

机译：用于光掩模和纳米压印模具的电子束光刻中曝光图案宽度与16nm半间距线间距图形的化学梯度之间的关系的理论研究
3. Progress in proximity electron lithography: demonstration of print and overlay performance using the low-energy electron beam proximity-projection lithography β tool [J] . Shinji Omori, Shinichiro Nohdo, Shoji Nohama, Journal of Microlithography, Microfabrication, and Microsystems. (JM3) . 2004,第3期

机译：邻近电子光刻技术的进展：使用低能电子束邻近投影光刻技术β的打印和覆盖性能演示
4. 50 keV electron-beam projection maskless lithography (PML2): results obtained with 2,500 programmable 12.5-nm sized beams [C] . Christof Klein, rnJan Klikovits, rnLaszlo Szikszai, Alternative lithographic technologies II . 2010

机译：50 keV电子束投影无掩模光刻（PML2）：用2500条可编程12.5 nm大小的光束获得的结果
5. Resolution improvement and pattern generator development for the maskless micro-ion-beam reduction lithography system. [D] . Jiang, Ximan. 2006

机译：无掩模微离子束减少光刻系统的分辨率提高和图案发生器开发。
6. Maskless Plasmonic Lithography at 22 nm Resolution [O] . Liang Pan, Yongshik Park, Yi Xiong, -1

机译：22 nm分辨率的无掩模等离子光刻
7. Combined helium ion beam and nanoimprint lithography attains 4 nm half-pitch dense patterns [O] . Williams RS, Wu W, Li W 2012

机译：组合的氦离子束和纳米压印光刻获得4nm半间距密集图案

REBL: design progress toward 16 nm half-pitch maskless projection electron beam lithography

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