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首页> 外文会议>Annual Semiconductor Pure Water and Chemicals Conference(SPWCC): UPW Track; 20050215-16; Santa Clara,CA(US) >Using Ozonated DI Water To Remove Particles In Semiconductor Wafer Cleaning
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Using Ozonated DI Water To Remove Particles In Semiconductor Wafer Cleaning

机译：在半导体晶圆清洗中使用臭氧去离子水去除颗粒

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摘要

It was experienced that introducing ozonated DI water (DIO_3) and eliminating SC1 in pre-gate wafer cleaning greatly improved production yield for an IC manufacturer. Further studying on DIO_3, it was discovered that highly concentrated DIO_3 under certain condition performed the same particulate removal efficiency as the SC1. That is why DIO_3 replaced SC1 successfully in the cleaning. In this study, particulate removal efficiency was evaluated under the conditions of DIO_3 concentration and temperature, dissolved gas level in DI water and megasonic irradiation. It was found that high DIO_3 concentration and megasonic irradiation were two necessary factors for high particulate removal efficiency. Without the combination, the removal efficiency was low. Some of the particulate removal results could be explained by the mechanism of gas cavitation with megasonic irradiation, but not all of them. It was reported that megasonic irradiation excites hydroxyl radical in DIO_3 and the radical etches and oxidizes the silicon surface. The radical etching and oxidation enhances the particulate removal in wafer cleaning. This hypothesis explains our particulate removal results from this study.
机译：经验表明，在预栅极晶圆清洗中引入臭氧化去离子水（DIO_3）并消除SC1可以极大地提高IC制造商的生产率。进一步研究DIO_3，发现在一定条件下高浓度DIO_3的除尘效率与SC1相同。因此，DIO_3在清洁中成功替换了SC1。在这项研究中，在DIO_3浓度和温度，去离子水中的溶解气体水平和超音速辐射的条件下评估了颗粒去除效率。发现高的DIO_3浓度和兆声辐射是高颗粒去除效率的两个必要因素。没有结合，去除效率低。某些微粒去除结果可以用兆声辐射的气蚀机理来解释，但不是全部。据报道，超音速辐射激发了DIO_3中的羟基自由基，该自由基腐蚀并氧化硅表面。自由基蚀刻和氧化可增强晶片清洁过程中的颗粒去除。这个假设解释了我们从这项研究中去除颗粒物的结果。

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