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Method for removing sub-micron particles from a semiconductor wafer surface by exposing the wafer surface to clean room adhesive tape material
Method for removing sub-micron particles from a semiconductor wafer surface by exposing the wafer surface to clean room adhesive tape material
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机译：通过将晶片表面暴露于洁净室胶带材料来从半导体晶片表面去除亚微米颗粒的方法
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摘要
A method for removing particles (21-24) begins by providing a substrate (10). The substrate (10) contains one or more integrated circuit layers (12) having a top surface (12A). The particles (21-24) are in contact with top surface (12A). A tape (14) comprising an adhesion layer (16) and a carrier film (18) is applied to the surface (12A) such that the adhesion layer (16) is in contact with the particles (21-24). The tape (14) is then removed from the surface (12A) wherein the adhesion layer (16) is able to remove the particles (21-24) from the surface (12A) of the substrate (10). The tape (14) can be applied to a front or active surface of a semiconductor wafer, where the surface either has a topography containing high areas (37) and low areas (39) or has a planarized surface (12A) in order to reduce a total number of particles (21-24) on the surface (12A).
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