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首页> 外文会议>Conference on advances in resist materials and processing technology XXVI; 20090223-25; San Jose, CA(US) >Line Edge Roughness transfer during plasma etching: Modeling approaches and comparison with experimental results
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Line Edge Roughness transfer during plasma etching: Modeling approaches and comparison with experimental results

机译：等离子刻蚀过程中线边缘粗糙度的转移：建模方法和与实验结果的比较

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摘要

In this paper, both modeling and experimental results for the effects of plasma etching on photoresist Line Edge and Width Roughness (LER/LWR) and their transfer to underlayer films are presented and compared. In particular, we investigate the roughness formation on both photoresist and underlayer sidewalls during a) isotropic trimming of photoresist, b) anisotropic plasma etching and LER transfer to substrate, and c) photoresist trimming followed by anisotropic plasma etching of the substrate. The trimming process is modeled with an (2D or 3D) isotropic movement of the resist sidewall. In the anisotropic plasma etching process, the resist sidewall is used as a mask to anisotropically transfer the pattern to the underlying film. Experiments include trimming of 193nm photoresist in O_2 plasma with no bias voltage and anisotropic etching of BARC and Si underlayers in CF_4 and HBr/Cl_2/O_2 with bias. Both model and experimental results show that resist trimming causes reduction of resist LWR and increase of the correlation length and roughness exponent with trimming time. This means that surface features vs trimming time become lower, wider and with less high frequency fluctuations. In the case of anisotropic etching, model predicts noticeable reduction of LWR whereas, correlation length and roughness exponent remain almost unaffected. The first experimental results seem to confirm these predictions. As regards the resist trimming followed by anisotropic etching, modeling results predict that the intervention of an isotropic trimming process before pattern transfer does not lead to larger LWR reduction.
机译：在本文中，提出并比较了等离子体刻蚀对光致抗蚀剂的线边缘和宽度粗糙度（LER / LWR）及其转移到底层膜的影响的建模和实验结果。尤其是，我们研究了a）光致抗蚀剂的各向同性修整，b）各向异性等离子体刻蚀和LER转移到基板以及c）光致抗蚀剂修整以及随后基板的各向异性等离子体刻蚀过程中在光致抗蚀剂和底层侧壁上形成的粗糙度。修整过程以抗蚀剂侧壁的（2D或3D）各向同性运动建模。在各向异性等离子体蚀刻工艺中，抗蚀剂侧壁用作掩模，以将图案各向异性地转移到下面的膜。实验包括在没有偏压的情况下在O_2等离子体中修整193nm光刻胶，并在偏压下对CF_4和HBr / Cl_2 / O_2中的BARC和Si底层进行各向异性蚀刻。模型和实验结果均表明，光刻胶修整会导致光刻胶LWR降低，相关长度和粗糙度指数随修整时间而增加。这意味着表面特征与修整时间变得更低，更宽且高频波动较小。在各向异性蚀刻的情况下，模型预测LWR会显着降低，而相关长度和粗糙度指数几乎不受影响。最初的实验结果似乎证实了这些预测。关于随后进行各向异性刻蚀的抗蚀剂修整，建模结果预测在图案转移之前对各向同性修整工艺的干预不会导致更大的LWR减小。

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