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首页> 外文会议>Conference on Challenges in Process Integration and Device Technology 18-19 September 2000 Santa Clara, USA >High Performance vs. Low Power Technology Roadmaps: How are they Different
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High Performance vs. Low Power Technology Roadmaps: How are they Different

机译：高性能与低功耗技术路线图：它们有何不同

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摘要

The effectiveness of a platform development approach for next generation logic technologies is discussed. Of the critical material changes that are being considered for the 0.1 umm technology technology generation and beyond, high k gate dielectrics will be driven by low power technology needs while low k and SOI technology enhancements will be driven by high performance technology requirements along with other technology "extras". The result is less overlap in technology requirements for low power logic technology relative to high performance logic technology at the immediate technology generation in question, but increased early for the following generation.
机译：讨论了用于下一代逻辑技术的平台开发方法的有效性。在0.1 umm技术及以后的技术中考虑的关键材料变化中，高k栅极电介质将由低功耗技术需求驱动，而低k和SOI技术的增强将由高性能技术要求以及其他技术驱动“额外”。结果是，与所讨论的直接技术一代相比，低功耗逻辑技术的技术要求与高性能逻辑技术的技术要求重叠较少，但对于下一代技术，这种要求在早期就有所增加。

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