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首页> 外文会议>Conference on Challenges in Process Integration and Device Technology 18-19 September 2000 Santa Clara, USA >Correlation between the Reliability of Ultra-Thin ISSG SiO_2 and Hydrogen Content
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Correlation between the Reliability of Ultra-Thin ISSG SiO_2 and Hydrogen Content

机译：超薄ISSG SiO_2的可靠性与氢含量的相关性

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摘要

The electrical characteristics of NMOS capacitors fabricated using hihg quality, ultra-thin (20-25A) SiO_2, grown by in-situ steam generation (ISSG) in a rapid thermal processing system, and a clustered amorphous Si gate electrode is reported. The results show that, in addition to the enhanced grown rate of ISSG oxides,the lower stress-induced leakage current (SILC) and significantly improved reliability of ISSG SiO_2, such as a longer time-to-breakdown (T_BD) under a constant voltage stress and larger charge-to-breakdown (Q_BD) characteristics, as compared to SiO_2 of similar equivalent oxide thickness (EOT) grown by rapid thermal oxidation (RTO). In addition, it is also found that the reliability of ISSG oxide is considerably improved as the H_2 percentage increases. The result of Fourier-transformed infrared (FT-IR) spectroscope indicates that ISSG oxides exhibit lower compressive strain than RTO oxides. Such appreciably improved reliability of ISSG oxide and reduced compressive strain may be explained by the reduction of defects within the structural transition layer (STL) between SiO_2 and Si substrate, such as weak Si-Si bonds (oxygen vacancies) and strained Si-O bonds, by highly reactive oxygen atoms which are hypothesized to be dissociated from the molecular oxygen due to the presence of hydrogen.
机译：据报道，NMOS电容器的电学特性是采用高质量，超薄（20-25A）SiO_2，通过快速热处理系统中的原位蒸汽发生（ISSG）生长和成簇的非晶硅栅电极制造的。结果表明，除了提高ISSG氧化物的生长速率外，更低的应力诱导漏电流（SILC）和显着提高了ISSG SiO_2的可靠性，例如在恒定电压下更长的击穿时间（T_BD）与通过快速热氧化（RTO）生长的类似等效氧化物厚度（EOT）的SiO_2相比，具有更大的应力和更大的电荷击穿（Q_BD）特性。另外，还发现，随着H_2百分比的增加，ISSG氧化物的可靠性大大提高。傅立叶变换红外（FT-IR）光谱仪的结果表明，ISSG氧化物的压缩应变比RTO氧化物低。可以通过减少SiO_2和Si衬底之间的结构过渡层（STL）中的缺陷（例如弱的Si-Si键（氧空位）和应变的Si-O键）来解释这种明显提高的ISSG氧化物可靠性和减小的压缩应变。被认为是由于氢的存在而与分子氧解离的高反应性氧原子。

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