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首页> 外文会议>Conference on Challenges in Process Integration and Device Technology 18-19 September 2000 Santa Clara, USA >Efficient Resist Edgebead Removal for Thick I-line Resist Coating Application on TEL Mark 7 Track System
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Efficient Resist Edgebead Removal for Thick I-line Resist Coating Application on TEL Mark 7 Track System

机译：在TEL Mark 7轨道系统上有效去除厚I线抗蚀剂涂层的抗蚀剂边珠

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摘要

Photoresist coating process for IC devcie manufacturing requires correct target thickness, good uniformity and low defect density. For thick resist films (1.5-3.0 microns regime or more) used for Ion Implant, Top Metal layer and/or Pad masks, resist beads built up around the side edges and on top of wafer within 0-3 mm approximately from edges will need to be removed to eliminate defects during ion implantation and etch operations. The conventional method of using solvent dispenses and optical exposure for edgebead removal (EBR) does not necessarily solve this problem for resist thickness greater than 1.5 micron. For solvent EBR application, most resist track systems, have both top and bottom dispense nozzles for wafer edge cleaning. However, due to the high risk of unwanted EBR solvent splashes with top EBR nozzle onto wafer surface, which will destroy resist pattern resulting in yield loss, top EBR solvent application is power to completely expose thick photoresist film within a reasonable time for throughout removal. In this paper, we will describe a new top rinse nozzle design and a combined process of top and bottom EBRs to provide adequate and efficient resist removal around wafer edges for thick photoresist films. A low cost and easy efficient top solvent EBR application and to avoid solvent splash defects. The low angle of top rinse nozzle below 20 degree was found to be important in reducing solvent droplet defects. Finally, a defect comparison study using KLA2132 will show a lower defect level for the modified top rinse nozzle than the standard one. Qualitative images of wafer edge cleanliness will be shown for resist thickness at .5, 1.8 and 2.5 microns using this new nozzle modification.
机译：用于IC设备制造的光刻胶涂层工艺需要正确的目标厚度，良好的均匀性和低缺陷密度。对于用于离子注入，顶层金属层和/或焊盘掩膜的厚抗蚀剂膜（1.5-3.0微米或更厚），需要在距边缘约0-3 mm的侧面边缘和晶圆顶部上堆积的抗蚀剂珠去除以消除离子注入和蚀刻操作期间的缺陷。对于抗蚀剂厚度大于1.5微米，使用溶剂分配和光学曝光以去除边缘珠（EBR）的常规方法不一定解决该问题。对于溶剂EBR应用，大多数抗蚀剂跟踪系统都具有顶部和底部分配喷嘴，用于清洗晶圆边缘。然而，由于不希望有的EBR溶剂通过顶部EBR喷嘴溅到晶片表面的风险很高，这会破坏抗蚀剂图案，从而导致良率损失，因此，顶部EBR溶剂的应用可以在合理的时间内完全暴露出厚的光刻胶膜，以进行整个去除。在本文中，我们将描述一种新的顶部冲洗喷嘴设计以及顶部和底部EBR的组合工艺，以提供足够且有效的去除晶圆边缘周围的抗蚀剂以形成厚的光刻胶膜。低成本，高效高效的顶部溶剂EBR应用，可避免溶剂飞溅缺陷。发现顶部冲洗喷嘴的低角度在20度以下对于减少溶剂液滴缺陷很重要。最后，使用KLA2132进行的缺陷比较研究表明，改进的顶部冲洗喷嘴的缺陷等级低于标准喷嘴。使用这种新的喷嘴修改，将显示晶片边缘清洁度的定性图像，显示抗蚀剂厚度分别为0.5、1.8和2.5微米。

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