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首页> 外文会议>Conference on Emerging Lithographic Technologies Ⅴ Feb 27-Mar 1, 2001, Santa Clara, USA >Ion Projection Lithography: Advances with Integrated Tool and Resist Processes
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Ion Projection Lithography: Advances with Integrated Tool and Resist Processes

机译：离子投射光刻：集成工具和抗蚀剂工艺的发展

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摘要

Ion Projection Lithography (IPL) uses electrostatic ion-optics for reduction printing of stencil mask patterns to wafer substrates. Key advantages of the technology are the high, non diffraction limited resolution, the great depth of focus associated with the very low numerical aperture, the stabilization of the image with pattern lock techniques and the fine tuning of the ion-optical system with multipole electrodes which allows for comparatively high mechanical tolerances of the tool. To demonstrate, that IPL will be able to meet the requirements for industrial production a Process Development Tool has been designed, integrated and put into operation. Currently the adjustable ion optics is being optimized for full resolution and current. A waferstage designed for later integration into the PDT has been successfully tested at ambient air in a separate test bench system. A resist process and the stencil masks necessary for the ion optical experiments are available: Several chemically amplified resists have been tested under ion exposure and showed good sensitivity, contrast and dose latitude. Masks designed for resolution and overlay experiments have been manufactured.
机译：离子投影光刻（IPL）使用静电离子光学技术，以减少将模板掩模图案印刷到晶圆基板上的过程。该技术的主要优点是：高的，无衍射极限的分辨率，与非常低的数值孔径相关的大景深，使用图案锁定技术稳定图像以及使用多极电极对离子光学系统进行微调，允许工具具有较高的机械公差。为了证明IPL将能够满足工业生产的要求，已经设计，集成并投入使用了过程开发工具。目前，可调节离子光学器件已针对全分辨率和电流进行了优化。设计用于以后集成到PDT中的晶圆载物台已在环境空气中的独立测试台系统中成功进行了测试。可以使用离子光学实验所需的抗蚀剂工艺和模板掩模：在离子暴露下测试了几种化学放大的抗蚀剂，它们显示出良好的灵敏度，对比度和剂量范围。已经制造出用于分辨率和重叠实验的掩模。

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