• 主题
高级搜索  >
历史搜索 清空历史
首页> 外文会议>Conference on Emerging Lithographic Technologies Ⅴ Feb 27-Mar 1, 2001, Santa Clara, USA >An Evaluation and Comparison of the Pattern Transfer Induced Image Placement Distortions on E-beam Projection Lithography Masks
【24h】

An Evaluation and Comparison of the Pattern Transfer Induced Image Placement Distortions on E-beam Projection Lithography Masks

机译：电子束投影光刻掩模上图案转移引起的图像放置畸变的评估和比较

获取原文
获取原文并翻译 | 示例
页面导航
  • 摘要
  • 著录项
  • 相似文献
  • 相关主题

摘要

Masks for electron projection lithography require the use of thin membrane structures due to the short scattering range of electrons in solid materials. The two leading mask formats for electron projection lithography are the continuous membrane scatterer mask and the stencil mask. The reduced mechanical stability of the membranes used for electron projection masks relative to conventional optical masks leads to increased levels of process induced image placement distortions. This paper evaluates the image placement distortions due to the pattern transfer processes on the continuous membrane mask format. Image placement was measured from both a cross-mask and intramembrane perspective to evaluate the effects of different patterns, pattern densities and density gradients on the observed image placement and the experimental results obtained were then compared to those predicted by finite element modeling.
机译：由于固体材料中电子的散射范围短，用于电子投影光刻的掩模需要使用薄膜结构。电子投影光刻的两种主要掩模格式是连续膜散射掩模和模板掩模。相对于传统的光学掩模，用于电子投影掩模的膜的机械稳定性降低导致过程引起的图像放置畸变的水平增加。本文评估了由于连续膜掩模格式上的图案转移过程而导致的图像放置失真。从交叉掩模和膜内角度测量图像放置，以评估不同图案，图案密度和密度梯度对观察到的图像放置的影响，然后将获得的实验结果与有限元建模预测的结果进行比较。

著录项

相似文献

  • 外文文献
  • 中文文献
  • 专利
获取原文

客服邮箱：kefu@zhangqiaokeyan.com

京公网安备：11010802029741号 ICP备案号：京ICP备15016152号-6 六维联合信息科技 (北京) 有限公司©版权所有

  • 客服微信

  • 服务号