Status of the liquid-xenon-jet laser-plasma source for EUV lithography

机译：液体氙射流激光等离子源的EUV光刻技术现状

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The liquid-xenon-jet laser-plasma source is one of the extreme-ultraviolet (EUV) source technologies under development for EUV lithography. This paper presents some recent improvements of the technology, including the ability to operate a stable plasma at a distance of 50 mm from the nozzle, the first positive mirror-lifetime results, and improved laser-to-EUV conversion efficiency of 0.75 %/(2%BW 27πsr) at λ=13.45 nm.

机译：液态氙射流激光等离子体源是正在为EUV光刻技术开发的极紫外（EUV）光源技术之一。本文介绍了该技术的一些最新改进，包括在距喷嘴50毫米的距离内操作稳定等离子体的能力，首次获得正的镜面寿命，以及将激光到EUV的转换效率提高了0.75％/（ 2％BW27πsr）在λ= 13.45 nm。

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来源
《Conference on Emerging Lithographic Technologies VI Pt.1, Mar 5-7, 2002, Santa Clara, USA》|2002年|p.102-109|共8页
会议地点 Santa Clara CA(US)
作者
Bjorn A. M. Hansson; Lars Rymell; Magnus Berglund; Oscar Hemberg; Emmanuelle Janin; Jalmar Thoresen; Sofia Mosesson; Johan Wallin; Hans M. Hertz;
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作者单位

Innolite AB, Loejtnantsgatan 25, SE-115 50 Stockholm, Sweden;

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会议组织
原文格式 PDF
正文语种 eng
中图分类无线电电子学、电信技术;
关键词
EUV lithography; laser-produced plasma; liquid jet; xenon;

机译：EUV光刻；激光产生的等离子体液体喷射氙;

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专利

1. A Liquid-Xenon-Jet Laser-Plasma X-Ray and EUV Source [J] . B.A.M. Hansson, L. Rymell, M. Berglund Microelectronic Engineering . 2000,第1a4期

机译：液体氙射流激光等离子X射线和EUV光源
2. Laser-plasma sources for extreme ultraviolet (EUV) lithography Laserplasmaquellen fur die Extrem-Ultraviolett (EUV) Lithographie [J] . M. Schnurer, H. Stiel, U. Vogt, LaserOpto: offizielles Organ der Wissenschaftlichen Gesellschaft Lasertechnik e.V . 2001,第3期

机译：激光等离子源，用于极紫外（EUV）光刻激光等离子源，用于极紫外（EUV）光刻
3. Liquid-jet target laser-plasma sources for EUV and X-ray lithography [J] . L. Rymell, L. Malmqvist, M. Berglund Microelectronic Engineering . 1999,第1a4期

机译：用于EUV和X射线光刻的液体喷射目标激光等离子体源
4. Status of the liquid-xenon-jet laser-plasma source for EUV lithography [C] . Bjorn A. M. Hansson, Lars Rymell, Magnus Berglund, Society of Photo-Optical Instrumentation Engineers Conference on Emerging Lithographic Technologies . 2002

机译：EUV光刻液 - 氙喷射激光等离子体源的状态
5. Debris characterization and mitigation of droplet laser plasma sources for EUV lithography. [D] . Takenoshita, Kazutoshi. 2006

机译：用于EUV光刻的液滴激光等离子体源的碎片表征和缓解。
6. High Sensitivity Resists for EUV Lithography: A Review of Material Design Strategies and Performance Results [O] . Theodore Manouras, Panagiotis Argitis 2020

机译：高敏感性抗蚀性对EUV光刻进行抗衡性：材料设计策略和绩效结果综述
7. Status of the liquid-xenon-jet laser-plasma source for EUV lithography [O] . Björn A. M. Hanssona, Lars Rymella, Magnus Berglunda, 2015

机译：用于EUV光刻的液体 - 氙 - 射流激光 - 等离子体源的现状

Status of the liquid-xenon-jet laser-plasma source for EUV lithography

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