InAsSb photoluminescence at low temperatures

机译：低温下的InAsSb光致发光

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In this work we present photoluminescence measurements of InAs_(0.916)Sb_(0.084) bulk material grown in MBE VIGO/MUT laboratory. Photoluminescence spectra showed the occurrence of two peaks in temperature range 20K-40K, one of them comes from the band-to-band transition while the another is the result of exciton transition.

机译：在这项工作中，我们介绍了在MBE VIGO / MUT实验室中生长的InAs_（0.916）Sb_（0.084）块状材料的光致发光测量。光致发光光谱显示在20K-40K的温度范围内出现了两个峰，其中一个峰是由带间跃迁引起的，而另一个峰是激子跃迁的结果。

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《13th Conference on Integrated Optics: Sensors, Sensing Structures, and Methods》|2018年|108300T.1-108300T.4|共4页
会议地点 Szczyrk(PL)
作者
K. Murawski; K. Grodecki; P. Martyniuk;
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Institute of Applied Physics, Military University of Technology, 2 Urbanowicza Str., 00-908 Warsaw, POLAND;

Institute of Applied Physics, Military University of Technology, 2 Urbanowicza Str., 00-908 Warsaw, POLAND;

Institute of Applied Physics, Military University of Technology, 2 Urbanowicza Str., 00-908 Warsaw, POLAND;

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1. Measurement of InAsSb bandgap energy and InAs/InAsSb band edge positions using spectroscopic ellipsometry and photoluminescence spectroscopy [J] . P. T. Webster, N. A. Riordan, S. Liu, Journal of Applied Physics . 2015,第24期

机译：使用椭偏光谱仪和光致发光光谱仪测量InAsSb带隙能量和InAs / InAsSb带边缘位置
2. Temperature-Dependent Photoluminescence of Cesium Lead Halide Perovskite Quantum Dots: Splitting of the Photoluminescence Peaks of CsPbBr3 and CsPb(Br/I)(3) Quantum Dots at Low Temperature [J] . Lee See Mak, Moon Cheol Joo, Lim Hyunseob, The journal of physical chemistry, C. Nanomaterials and interfaces . 2017,第46期

机译：铯铅卤化铯钙钛矿量子点的温度依赖性光致发光：低温下CSPBBR3和CSPB（BR / I）（3）量子点的光致发光峰分裂
3. Spectral Line Width of the Current-Tunable Lasers on the Base of InAsSb/InAsSbP at Low Temperature [J] . A. N. Imenkov, N. M. Kolchanova, P. Kubat, Semiconductors . 2002,第5期

机译：低温下基于InAsSb / InAsSbP的电流可调激光器的光谱线宽
4. InAsSb photoluminescence at low temperatures [C] . K. Murawski, K. Grodecki, P. Martyniuk Conference on Integrated Optics: Sensors, Sensing Structures, and Methods . 2018

机译：在低温下INASSB光致发光
5. Energy Level Structure of Free Excitons in 4H SiC from Wavelength Modulated Absorption Spectroscopy and Low Temperature Photoluminescence [D] . Klahold, Walter. 2018

机译：波长调制吸收光谱和低温光致发光研究4H SiC中自由激子的能级结构
6. InAs/InAsSb Strained-Layer Superlattice Mid-Wavelength Infrared Detector for High-Temperature Operation [O] . Gamini Ariyawansa, Joshua Duran, Charles Reyner, 2019

机译：用于高温操作的InAs / InAsSb应变层超晶格中波红外探测器
7. Measurement of InAsSb bandgap energy and InAs/InAsSb band edge positions using spectroscopic ellipsometry and photoluminescence spectroscopy [O] . Webster, P. T., Riordan, N. A., Liu, S., 2015

机译：测量Inassb带隙能量和Inas / Inassb带边缘使用光谱椭偏仪和光致发光的位置光谱
8. Final Report: Research Area 4: Electronics: Study of defect levels in InAs/InAsSb type-II Superlattice Using Pressure Dependent Photoluminescence. [R] . 2015

机译：最终报告：研究领域4：电子学：使用压力相关光致发光研究Inas / Inassb II型超晶格中的缺陷水平。

InAsSb photoluminescence at low temperatures

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