Higher operating temperature photoresponse of MWIR T2SLs InAs/InAsSb photodetector

机译：MWIR T2SLs InAs / InAsSb光电探测器的更高工作温度光响应

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We investigate the photoresponse of mid-wavelength infrared radiation (MWIR) type-Ⅱ superlattices (T2SLs) InAs/InAsSb high operating temperature (HOT) photoconductor grown on GaAs substrate. The device consists of a 200 periods of active layer grown on GaSb buffer layer. The photoresistor reached a 50% cut-off wavelength of 5 μm and 6 μm at 200 K and 300 K respectively. The time constant of 30 ns is observed at 200 K under 0.5 V bias. This is the first observation of the photoresponse in MWIR T2SLs InAs/InAsSb photocondotocr above 200 K.

机译：我们研究了在GaAs衬底上生长的中波长红外辐射（MWIR）Ⅱ型超晶格（T2SLs）InAs / InAsSb高工作温度（HOT）光电导体的光响应。该器件由在GaSb缓冲层上生长的200个周期的有源层组成。光敏电阻在200 K和300 K时分别达到5μm和6μm的50％截止波长。在200 V，0.5 V偏压下观察到30 ns的时间常数。这是在200 K以上MWIR T2SLs InAs / InAsSb光电导体中光响应的首次观察。

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来源
《13th Conference on Integrated Optics: Sensors, Sensing Structures, and Methods》|2018年|1083010.1-1083010.6|共6页
会议地点 Szczyrk(PL)
作者
Krystian Michalczewski; Tsung-Tin Tsai; Piotr Martyniuk; Chao-Sin Wu;
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作者单位

Institute of Applied Physics, Military University of Technology, Urbanowicza 2 Str., 00-908 Warsaw, Poland;

Graduate Institute of Photonics and Optoelectronics, National Taiwan University, Roosevelt Str., 10617 Taipei, Taiwan;

Institute of Applied Physics, Military University of Technology, Urbanowicza 2 Str., 00-908 Warsaw, Poland;

Graduate Institute of Photonics and Optoelectronics, National Taiwan University, Roosevelt Str., 10617 Taipei, Taiwan;

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原文格式 PDF
正文语种 eng
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关键词
HOT; MWIR T2SLs InAs/InAsSb; photoconductor;

机译：热; MWIR T2SLs InAs / InAsSb；光电导体;

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专利

1. Ultimate Performance of IB CID T2SLs InAs/GaSb and InAs/InAsSb Longwave Photodetectors for High Operating Temperature Condition [J] . Martyniuk P., Hackiewicz K., Rutkowski J., Journal of Electronic Materials . 2019,第10期

机译：IB CID T2SLS INAS / GASB和INAS / INASSB长波光电探测器的终极性能，用于高工作温度条件
2. Demonstration of HOT photoresponse of MWIR T2SLs InAs/InAsSb photoresistors [J] . Bulletin of the Polish Academy of Sciences. Technical Sciences . 2019,第1期

机译：MWIR T2SLS INAS / INASSB光致抗蚀剂的热光响应的演示
3. Demonstration of HOT LWIR T2SLs InAs/InAsSb photodetectors grown on GaAs substrate [J] . Infrared physics and technology . 2018,第期

机译：GaAs衬底上生长的热LWIR T2SLS INAS / INASSB光电探测器的示范
4. Higher operating temperature photoresponse of MWIR T2SLs InAs/InAsSb photodetector [C] . Krystian Michalczewski, Tsung-Tin Tsai, Piotr Martyniuk, Conference on Integrated Optics: Sensors, Sensing Structures, and Methods . 2018

机译：MWIR T2SLS INAS / INASSB光电探测器的较高工作温度光响应
5. Transport in Mid-Wavelength Infrared (MWIR) p- and n-Type InAsSb and InAs/InAsSb Type-II Strained Layer Superlattices (T2SLs) for Infrared Detection [D] . Casias, Lilian K. 2019

机译：在中波长红外线（MWIR）P-and N型INASSB和INAS / INASSB Type-II紧张层超大图格（T2SL）用于红外检测
6. Dark current reduction in microjunction-based double electron barrier type-II InAs/InAsSb superlattice long-wavelength infrared photodetectors [O] . Romain Chevallier, Abbas Haddadi, Manijeh Razeghi -1

机译：基于微结的双电子势垒II型InAs / InAsSb超晶格长波长红外光电探测器的暗电流降低
7. Mid-wavelength infrared high operating temperature pBn photodetectors based on type-II InAs/InAsSb superlattice [O] . Donghai Wu, Jiakai Li, Arash Dehzangi, 2020

机译：基于II型INAS / INASSB超晶格的中波长红外高工作温度PBN光电探测器

Higher operating temperature photoresponse of MWIR T2SLs InAs/InAsSb photodetector

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