Selected technological aspects of semiconductor samples preparation for Hall effect measurements

机译：用于霍尔效应测量的半导体样品制备的选定技术方面

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The article presents comparison of two alternative method of Hall sample preparation - manual "square" shaped and the cloverleaf one made by full photolithography process. The influence of symmetry and contacts configuration on repeatability of 4-point resistance and Hall resistance versus magnetic field characteristics was a Hall sample quality criterion. The characterization was performed in ±15 T magnetic-field range at 80 K and 300 K, for undoped InAs epitaxial layer, deposited on the GaAs substrate using MBE. It was indicated that the sample made by photolithography had better usefulness for Hall characterization, showing broader magnetic field range by two orders of magnitude than the reference one.

机译：本文介绍了霍尔样品制备的两种替代方法的比较：手动“正方形”形和通过全光刻工艺制备的苜蓿叶形。对称性和触点配置对4点电阻和霍尔电阻与磁场特性的重复性的影响是霍尔样品的质量标准。对于未掺杂的InAs外延层（使用MBE沉积在GaAs衬底上），在80 K和300 K的±15 T磁场范围内进行了表征。结果表明，用光刻法制得的样品具有更好的霍尔特性，与参考样品相比，其磁场范围扩大了两个数量级。

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来源
《13th Conference on Integrated Optics: Sensors, Sensing Structures, and Methods》|2018年|108300V.1-108300V.5|共5页
会议地点 Szczyrk(PL)
作者
Kinga Gorczyca; Jacek Boguski; Jaroslaw Wrobel; Piotr Martyniuk;
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作者单位

Institute of Applied Physics, Military University of Technology, 2 Urbanowicza Str., 00-908 Warsaw, Poland;

Institute of Applied Physics, Military University of Technology, 2 Urbanowicza Str., 00-908 Warsaw, Poland;

Institute of Applied Physics, Military University of Technology, 2 Urbanowicza Str., 00-908 Warsaw, Poland;

Institute of Applied Physics, Military University of Technology, 2 Urbanowicza Str., 00-908 Warsaw, Poland;

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原文格式 PDF
正文语种 eng
中图分类
关键词
InAs; QMSA; magnetoresistance; 4-point resistance; Van der Pauw; photolithography;

机译：InAs; QMSA；磁阻4点电阻；范德堡；光刻;

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Selected technological aspects of semiconductor samples preparation for Hall effect measurements

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