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首页> 外文会议>Conference on Optical Microlithography XV Pt.2, Mar 5-8, 2002, Santa Clara, USA >OPC Rectification of Random Space Patterns in 193nm Lithography
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OPC Rectification of Random Space Patterns in 193nm Lithography

机译：193nm光刻中随机空间图案的OPC校正

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摘要

This paper presents a methodology for modeling the space printability at the gate level in 193nm lithography. Spaces are shown to be more susceptible to process variations and lens aberrations than lines are. Experimental Scanning Electron Microscopy (SEM) pictures show that the scum and bridging effects can occur in spaces although all the line critical dimensions (CDs) are on target. A resist imaging model is used to simulate the line CDs through defocus, pitch and size, and the prediction error is within 5nm. However, this model can not reasonably predict space CDs without using variable threshold, which is explained a proposed trajectory dissolution rate model. Based on the dissolution model, a process rule checker is proposed which inspects the peak light intensity in a space and compares it with a given threshold. This condition is verified experimentally.
机译：本文提出了一种在193nm光刻中对栅极级空间可印刷性进行建模的方法。所显示的空间比线条更容易受到工艺变化和镜头像差的影响。实验扫描电子显微镜（SEM）图片显示，尽管所有线临界尺寸（CD）都在目标上，但浮渣和桥接效应仍会在空间中发生。抗蚀剂成像模型用于通过散焦，间距和尺寸来模拟线CD，并且预测误差在5nm以内。然而，该模型不能在不使用可变阈值的情况下合理地预测空间CD，这解释了提出的轨迹溶出速率模型。基于溶出度模型，提出了一种过程规则检查器，用于检查空间中的峰值光强度并将其与给定阈值进行比较。此条件已通过实验验证。

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