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首页> 外文会议>Conference on Optical Microlithography XV Pt.2, Mar 5-8, 2002, Santa Clara, USA >Accuracy of New Analytical Models for Resist Formation Lithography
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Accuracy of New Analytical Models for Resist Formation Lithography

机译：光刻胶平版印刷新分析模型的准确性

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摘要

The applicability and accuracy of newly developed analytical models for resist process effects are investigated. These models combine a stationary level set formulation with a lumped parameter model. They allow to propagate the 3D photoresist profile given the 3D aerial image distribution. The first model, based on the vertical propagation algorithm (VPM), takes into account the 2D intensity distribution inside the resist, including the absorption. The second model incorporates the scaled defocus algorithm (SCDF), which describes the 3D intensity of the resist, taking into account the defocus values. In this paper we investigate the applicability for any geometry, for process window determination and the accuracy by taking reference to the fully fledged simulator SOLID-C. The suggested methods allow to calculate 3D resist profile in a fast way thereby enabling the prediction of large areas.
机译：研究了新开发的抗蚀剂工艺效应分析模型的适用性和准确性。这些模型将固定水平集公式与集总参数模型结合在一起。给定3D航拍图像分布，它们可以传播3D光刻胶轮廓。基于垂直传播算法（VPM）的第一个模型考虑了抗蚀剂内部的2D强度分布，包括吸收率。第二个模型合并了缩放的散焦算法（SCDF），该算法描述了抗蚀剂的3D强度，并考虑了散焦值。在本文中，我们将参考完全成熟的模拟器SOLID-C，研究任何几何形状的适用性，过程窗口的确定和准确性。建议的方法允许快速计算3D抗蚀剂轮廓，从而实现大面积预测。

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