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首页> 外文会议>Conference on Optical Microlithography XV Pt.2, Mar 5-8, 2002, Santa Clara, USA >Uniform Metal Patterning on Micromachined 3-D Surfaces Using Multi-Step Exposure of UV Light
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Uniform Metal Patterning on Micromachined 3-D Surfaces Using Multi-Step Exposure of UV Light

机译：使用多步曝光的紫外线在微机械3-D表面上进行均匀的金属图案化

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摘要

Focal depth limitations prevent use of normal lithography tools and processes on three-dimensional structures. A relatively little known form of uniform metal trace patterning over extreme 3-D structured wafers by a multi-step exposure method, called "stitching" technology, has recently been developed by Hewlett-Packard Company, with equipment support from the Ultratech Stepper Company, the result of which is being reported in this paper. The basic idea is to slice the metal lines to be patterned into topographic layers that can each be exposed in one step. Patches of patterned metal lines can thus be "stitch"-ed to one another (thus, the term "stitching"). Exposure of one photo-resist layer by "stitching" takes several individual exposures at different focus planes. A patent has been applied for this method on behalf of the Hewlett Packard Company. Results of the present investigation demonstrate the superior uniformity of metal trace pattern over 350-um deep trenches produced by multi-step exposure, as compared to the conventional single-step exposure method, typically used on planar semiconductor wafer. The integrated method offers an enabling technology for patterning of extensive topography typically required for a multitude of MEMS structures and designs, novel interconnect structures as well as advanced packaging applications. The method is simple, accurate and relatively low-cost in comparison with other 3-D exposure techniques available and capable of 3-D structure patterning.
机译：焦点深度限制会阻止在三维结构上使用常规的光刻工具和工艺。惠普公司最近在Ultratech Stepper公司的设备支持下，开发了一种相对鲜为人知的形式，这种形式通过多步曝光方法（称为“缝合”技术）在极端3-D结构化的晶圆上进行均匀的金属走线图案。其结果正在本文中报告。基本思想是将要图案化的金属线切成可以在一个步骤中曝光的地形层。因此，图案化的金属线的补丁可以彼此“缝合”（因此，术语“缝合”）。通过“缝合”对一个光刻胶层进行曝光会在不同的聚焦平面上进行几次单独的曝光。该方法已代表Hewlett Packard Company申请了专利。本研究的结果表明，与通常在平面半导体晶圆上使用的常规单步曝光方法相比，通过多步曝光产生的350微米深沟槽具有金属迹线图案的优异均匀性。集成方法为多种MEMS结构和设计，新颖的互连结构以及先进的封装应用通常需要的广泛形貌的构图提供了一种使能技术。与其他可用的3-D结构图案化技术相比，该方法简单，准确且成本较低。

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