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首页> 外文会议>Conference on Photomask and Next-Generation Lithography Mask Technology IX, Apr 23-25, 2002, Yokohama, Japan >LITHOGRAPHIC ANALYSIS OF DISTRIBUTED PHOTO MASK DEFECTS. PART Ⅱ: RANDOM MASK CD ERRORS
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LITHOGRAPHIC ANALYSIS OF DISTRIBUTED PHOTO MASK DEFECTS. PART Ⅱ: RANDOM MASK CD ERRORS

机译：分布式光罩缺陷的光刻技术分析。第二部分：随机掩码CD错误

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With constant push for smaller and faster devices photo mask technology has become the most critical part of the entire integrated circuit (IC) production flow. Mask inspection and mask defect repair are increasingly important components of advanced photo mask technology. The low cost of mask manufacturing and the necessity of delivering photo masks to production floor in the shortest possible time require new photo mask specs and acceptance criteria. It is no longer economically viable to reject a photo mask because some mask anomalies were found, or repair all the defects detected by state of the art inspection tool. One should use a smart approach to separate tolerable mask anomalies from real mask defects that might negatively affect device yield. However, this is not a trivial task. With rising mask complexity (e.g., binary masks with aggressive optical proximity correction or phase-shifting masks (PSM)―ttenuated and alternating) and inspection and metrology tools running out of steam, new technologies such as the AIMS~(TM) and Virtual Stepper~(~R) system must be used to sort nuisance mask defects from real ones. This will help to reduce the number of required defect repairs and shorten mask manufacturing cycle time. However, it is very difficult to utilize AIMS in the production environment because of its low operational speed; the Virtual Stepper software, in its turn, relies on mask data captured by inspection/metrology hardware. In the case of phase masks, such as Attenuated PSM (especially high transmission EAPSM) and Alternating PSM, inspection tools are not able to accurately retrieve optical properties of mask materials; as a result defect analysis is becoming very difficult and unreliable task. Very common types of PSM defects that occur during mask manufacturing and repair processes are the so-called distributed defects, such as gallium stains, riverbeds, pinhole clusters, and large chrome residuals (on EAPSM). It is very difficult to get accurate information about the transmittance and phase of these defects at actinic wavelength using inspection and metrology tools. With a simulation study one can reconstruct such mask defects, and by varying defect phase and transmission one can learn about the impact of such mask defects on printed wafers. In addition, lithography simulation helps to better understand how mask defects behave under different lithography process conditions. In our previous research on photo mask distributed defects (this work was presented at 18th European mask conference, Munich 2002) we looked into several cases of distributed mask defects such as large chrome residuals and clustered pinholes on EAPSM. We found a relationship between photo mask defect transmissivity and resulting printed wafer critical dimension (CD) error. CD variations (systematic and random mask CD errors) across the photo mask represent another type of yield killing distributed defects. Systematic errors can be analyzed and fixed by applying different corrective methods (e.g. LPC, OPC). The negative effect of random errors can be minimized by selecting the most robust manufacturing process, and by choosing optimal lithography options (RETs). In this paper we investigated randomly distributed CD errors. Monte Carlo simulation has been used to emulate large numbers (10000 - 40000) of mask random CD errors.
机译：随着不断寻求更小，更快的器件，光掩模技术已成为整个集成电路（IC）生产流程中最关键的部分。掩模检查和掩模缺陷修复已成为高级光掩模技术中越来越重要的组成部分。掩模制造的低成本和在尽可能短的时间内将光掩模交付生产车间的必要性要求新的光掩模规格和验收标准。由于发现了某些掩模异常或要修复由现有技术检查工具检测到的所有缺陷，因此拒绝光掩模在经济上不再可行。人们应该使用一种聪明的方法将可容忍的掩模异常与可能对器件良率产生负面影响的实际掩模缺陷区分开。但是，这不是一件容易的事。随着掩模复杂性的提高（例如带有主动光学接近度校正的二进制掩模或变位和交替的相移掩模（PSM））以及检查和计量工具用尽了新技术，例如AIMS〜（TM）和Virtual Stepper等新技术〜（〜R）系统必须用于从实际缺陷中筛选出有害的掩模缺陷。这将有助于减少所需的缺陷修复次数，并缩短掩模制造周期。但是，由于AIMS的运行速度较慢，因此很难在生产环境中使用它。反过来，Virtual Stepper软件依赖于检查/计量硬件捕获的模板数据。对于相位掩模，例如衰减型PSM（尤其是高透射EAPSM）和交替PSM，检查工具无法准确地获取掩模材料的光学特性。结果，缺陷分析变得非常困难和不可靠。在掩模制造和修复过程中发生的非常常见的PSM缺陷类型是所谓的分布式缺陷，例如镓污渍，河床，针孔团簇和大量铬残留物（在EAPSM上）。使用检查和计量工具很难获得有关这些缺陷在光化波长下的透射率和相位的准确信息。通过仿真研究，人们可以重建这种掩模缺陷，并且通过改变缺陷的相位和透射率，人们可以了解这种掩模缺陷对印刷晶圆的影响。此外，光刻仿真有助于更好地了解掩模缺陷在不同光刻工艺条件下的行为。在我们先前对光掩模分布缺陷的研究（这项工作在2002年慕尼黑举行的第18届欧洲掩模会议上发表）中，我们研究了几种分布掩模缺陷的情况，例如大的铬残留物和EAPSM上的簇状针孔。我们发现了光掩模缺陷的透射率与所产生的印刷晶圆临界尺寸（CD）误差之间的关系。整个光掩模上的CD变化（系统性和随机性的CD CD错误）代表了另一种类型的良率破坏型分布缺陷。可以通过应用不同的纠正方法（例如LPC，OPC）来分析和修复系统错误。通过选择最可靠的制造工艺以及选择最佳光刻选项（RET），可以将随机误差的负面影响降至最低。在本文中，我们研究了随机分布的CD错误。蒙特卡洛模拟已用于仿真大量（10000-40000）的掩码随机CD错误。

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