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首页> 外文会议>Conference on Photomask and Next-Generation Lithography Mask Technology IX, Apr 23-25, 2002, Yokohama, Japan >Simulation of Transmittance on the Effect of Resolution Enhancement of 100 nm Pattern with Attenuated Phase-Shifting Mask in 193 nm Lithography
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Simulation of Transmittance on the Effect of Resolution Enhancement of 100 nm Pattern with Attenuated Phase-Shifting Mask in 193 nm Lithography

机译：衰减衰减相移掩模在193 nm光刻中透射率对100 nm图案分辨率提高效果的模拟

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摘要

Compared to normal transmittance (T<6%) attenuated phase-shifting mask (AttPSM), the higher transmittance AttPSM in clear-field masks has higher electric field amplitude with 180°phase-shift for 0.1 μm isolated line. Due to the stronger interference with the higher electric field amplitude under the edge of line pattern with 180°phase-shifting, the resolution of aerial image of 0.1 μm isolated line increased with the increasing of transmittance. Under dipole illumination σ_c 0.6 and σ_r 0.3, and NA 0.75, the T% of AttPSM about 22% could provide the better normalized image log-slope of 0.1 μm isolated and semi-dense (line/space=1:1.5) line pattern at focus -0.10 μm. When the layout of the 0.1 μm pitch (1:1.5) and isolated contact pattern is designed as a dark-tone mask, the contrast of the aerial image increased with increasing T% of AttPSM. The side-lobe could be avoided under the design of dark-tone mask. However, if the contact pattern is designed as a dark-tone mask, a negative resist is necessary. The combination of dark-tone mask, high-transmittance AttPSM and negative resist could provide better contrast of the aerial image and resolution of the 0.1 μm contact-hole pattern in 193 nm lithography.
机译：与正常透射率（T <6％）的衰减相移掩模（AttPSM）相比，对于0.1μm隔离线，在明场掩模中较高的透射率AttPSM具有较高的电场幅度，且相移180°。由于在具有180°相移的线型边缘下对较高电场幅度的较强干扰，0.1μm隔离线的航拍图像分辨率随透射率的增加而增加。在偶极子照明σ_c0.6和σ_r0.3以及NA 0.75的情况下，AttPSM的T％约为22％可以提供更好的归一化图像对数斜率（0.1μm隔离和半密集（线/空间= 1：1.5）的线图）聚焦-0.10μm当将0.1μm间距（1：1.5）和孤立的接触图案的布局设计为暗调掩模时，航空影像的对比度会随着AttPSM的T％的增加而增加。在深色掩膜的设计下可以避免旁瓣。但是，如果将接触图案设计为深色掩膜，则需要负抗蚀剂。深色掩模，高透射率的AttPSM和负性抗蚀剂的组合可以提供更好的航拍图像对比度和193 nm光刻中0.1μm接触孔图案的分辨率。

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