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首页> 外文会议>Conference on photomask and next-generation lithography mask technology >Simulation of Transmittance on the Effect of Resolution Enhancement of 100 nm Pattern with Attenuated Phase-Shifting Mask in 193 nm Lithography
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Simulation of Transmittance on the Effect of Resolution Enhancement of 100 nm Pattern with Attenuated Phase-Shifting Mask in 193 nm Lithography

机译：在193nm光刻中与减毒相移掩模分辨率提高100nm图案分辨率提高的透射率模拟

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Compared to normal transmittance (T<6%) attenuated phase-shifting mask (AttPSM), the higher transmittance AttPSM in clear-field masks has higher electric field amplitude with 180°phase-shift for 0.1 μm isolated line. Due to the stronger interference with the higher electric field amplitude under the edge of line pattern with 180°phase-shifting, the resolution of aerial image of 0.1 μm isolated line increased with the increasing of transmittance. Under dipole illumination σ_c 0.6 and σ_r 0.3, and NA 0.75, the T% of AttPSM about 22% could provide the better normalized image log-slope of 0.1 μm isolated and semi-dense (line/space=1:1.5) line pattern at focus -0.10 μm. When the layout of the 0.1 μm pitch (1:1.5) and isolated contact pattern is designed as a dark-tone mask, the contrast of the aerial image increased with increasing T% of AttPSM. The side-lobe could be avoided under the design of dark-tone mask. However, if the contact pattern is designed as a dark-tone mask, a negative resist is necessary. The combination of dark-tone mask, high-transmittance AttPSM and negative resist could provide better contrast of the aerial image and resolution of the 0.1 μm contact-hole pattern in 193 nm lithography.
机译：相对于正常的透射率（T <6％）衰减相移掩模（AttPSM），在亮场掩模的透射率较高AttPSM具有180°相移为0.1μm的孤立线更高的电场振幅。由于在具有180°模式的线条图案边缘下的较高电场幅度的干扰，随着透射率的增加，0.1μm隔离线的航空图像的分辨率增加。在偶极照明下σ_c0.6和σ_r0.3和na 0.75，attpsm的t％约22％可以提供0.1μm的更好的归一化图像记录斜率，半致密（线/空间= 1：1.5）线图案聚焦-0.10μm。当0.1μm间距（1：1.5）和隔离接触图案的布局设计为深色色调掩模时，航空图像的对比度随着attpsm的增加而增加。在深色掩模的设计下可以避免侧瓣。但是，如果接触图案设计为深色色调掩模，则需要负抗蚀剂。深色色调掩模，高透射率Attpsm和负抗蚀剂的组合可以在193nm光刻中的0.1μm接触孔图案的空中图像和分辨率更好地形成。

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