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首页> 外文会议>Conference on Photomask and Next-Generation Lithography Mask Technology IX, Apr 23-25, 2002, Yokohama, Japan >The Process of Manufacturing and Inspection of High-end (Ternary) Tritone EAPSM Reticles for 0.13μm Design Rule Generation
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The Process of Manufacturing and Inspection of High-end (Ternary) Tritone EAPSM Reticles for 0.13μm Design Rule Generation

机译：高端（三元）Tritone EAPSM掩模版的制造和检查过程，生成0.13μm设计规则

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摘要

Embedded attenuated phase shift masks (EAPSMs) are being used in the semiconductor industry for high-density patterning of critical layers, such as gate and contact layers of circuit devices, of the 130 nm node and beyond. This paper focuses on the manufacturing and inspection of ternary (tritone) phase shift masks designed for the 130 nm design-rule generation. The manufacturing flow is presented and the use of the ARIS~(TM)100i mask inspection system for inspection is demonstrated.
机译：嵌入式衰减相移掩模（EAPSM）在半导体行业中用于对130 nm节点及更高节点的关键层（例如电路设备的栅极和接触层）进行高密度图案化。本文着重于为130 nm设计规则而设计的三元（tritone）相移掩模的制造和检查。介绍了制造流程，并演示了ARIS〜（TM）100i口罩检测系统用于检测的用途。

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