• 主题
高级搜索  >
历史搜索 清空历史
首页> 外文会议>Conference on Photomask and Next-Generation Lithography Mask Technology IX, Apr 23-25, 2002, Yokohama, Japan >Metrology Methods Comparison for 2D Structures on Binary and Embedded Attenuated Phase Shift Masks
【24h】

Metrology Methods Comparison for 2D Structures on Binary and Embedded Attenuated Phase Shift Masks

机译：二进制和嵌入式衰减相移掩模上二维结构的计量方法比较

获取原文
获取原文并翻译 | 示例
页面导航
  • 摘要
  • 著录项
  • 相似文献
  • 相关主题

摘要

There are several different methods for printing contact holes on wafers using optical lithography. A preferred resolution enhancement technique for improved contact hole lithography performance is the embedded attenuated phase shift mask (EAPSM). The EAPSM comes in many flavors and forms, but the current preferred form is a film transmission of 6% and a phase shift of 180 degrees relative to the clear fused silica areas. It is important to note that the phase shift and transmission values for the phase shift mask are at the actinic exposure wavelength of the wafer stepper/scanner. That is the mask is designed to have a transmission of 6% and phase shift of 180-degrees at 248nm or 193nm, depending on the wafer stepper. The resulting transmission of the phase shift mask at the inspection tool wavelength of 365nm is much higher, and the phase shift of the 365nm radiation is significantly less than at the shorter actinic wavelength. The gray-scaled aerial images that are collected by the mask inspection tool could vary significantly for the same size 2-D feature in the binary mask, the 248nm EAPSM, and the 193nm EAPSM. This is also compounded by the fact that the inspection tool calibrates the background transmission of the phase shift material as 0% transmission and calibrates the transmission of the fused silica as 100% transmission. When these gray-scaled images are used in an energy flux algorithm for contact area measurement, they can be potentially different for each of the three types of masks used to print contact holes. This paper explores the issues involved in using an off-actinic aerial image as the basis for the AVI method of contact sizing.
机译：有几种使用光刻技术在晶片上印刷接触孔的方法。用于改善接触孔光刻性能的一种优选的分辨率增强技术是嵌入式衰减相移掩模（EAPSM）。 EAPSM有许多种风味和形式，但目前首选的形式是6％的薄膜透射率和相对于透明熔融石英区域的180度相移。重要的是要注意，相移掩模的相移和透射率值位于晶片步进器/扫描器的光化曝光波长处。也就是说，根据晶圆步进机的不同，掩模被设计为具有6％的透射率和248nm或193nm的180度相移。在检查工具波长为365nm时，相移掩模的透射率要高得多，并且与较短的光化波长相比，365nm辐射的相移要小得多。对于二进制掩膜，248nm EAPSM和193nm EAPSM中相同大小的二维特征，由掩膜检查工具收集的灰度航拍图像可能会发生显着变化。此外，检查工具将相移材料的背景透射率校准为0％透射率，并将熔融石英的透射率校准为100％透射率，这也使情况更加复杂。当这些灰度图像用于能量通量算法中以进行接触面积测量时，对于用于打印接触孔的三种类型的掩模中的每一种而言，它们可能会有所不同。本文探讨了使用非光化航拍图像作为AVI接触尺寸确定方法基础的问题。

著录项

相似文献

  • 外文文献
  • 中文文献
  • 专利
获取原文

客服邮箱：kefu@zhangqiaokeyan.com

京公网安备：11010802029741号 ICP备案号：京ICP备15016152号-6 六维联合信息科技 (北京) 有限公司©版权所有

  • 客服微信

  • 服务号