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首页> 外文会议>Conference on Photon Processing in Microelectronics and Photonics Jan 21-24, 2002 San Jose, USA >Pulsed laser deposition of silicon dioxide thin films with silicone targets for fabricating waveguide devices
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Pulsed laser deposition of silicon dioxide thin films with silicone targets for fabricating waveguide devices

机译：具有硅靶的二氧化硅薄膜的脉冲激光沉积，用于制造波导器件

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摘要

Silicon dioxide (SiO_2) thin films were deposited at room temperature by 193-nm ArF excimer laser ablation of silicone in oxygen atmosphere. Only the side chains (CH_3) of the target were photo-dissociated during ablation to deposit Si-O bonds on a substrate in high laser fluence at about 10 J/cm~2. Oxygen gas worked to oxidize the Si-O bonds ejected from the target to form SiO_2 thin films at the gas pressure of 4.4 X10~(-2) Torr, in addition to reducing the isolated carbon mixed into the films. We also found that the deposition rate could control refractive index of the films. The refractive index of the film deposited at 0.05 nm/pulse is greater than that of the film at 0.1 nm/pulse. Thus, a 0.2- μm-thick SiO_2 cladding film deposited at 0.1 nm/pulse was firstly formed on the whole surface of a 100-μm-thick polyester film, and then a 0.6 μm-thick SiO_2 core film at 0.05 nm/pulse was fabricated in a line on the sample. The sample functioned as a waveguide device for a 633-nm line of He-Ne laser.
机译：在氧气氛下，通过硅酮的193 nm ArF受激准分子激光烧蚀在室温下沉积二氧化硅（SiO_2）薄膜。在烧蚀过程中，仅靶的侧链（CH_3）被光解离，从而以大约10 J / cm〜2的高激光通量在衬底上沉积Si-O键。氧气的作用是在4.4 X10〜（-2）Torr的气压下氧化从靶材喷出的Si-O键，从而形成SiO_2薄膜，此外还减少了混入薄膜中的孤立碳。我们还发现沉积速率可以控制薄膜的折射率。以0.05nm /脉冲沉积的膜的折射率大于以0.1nm /脉冲沉积的膜的折射率。因此，首先在100μm厚的聚酯膜的整个表面上形成以0.1nm /脉冲沉积的0.2μm厚的SiO 2覆层膜，然后以0.05nm /脉冲形成0.6μm厚的SiO 2芯膜。在样品上排成一行。该样品用作633 nm He-Ne激光器的波导器件。

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