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首页> 外文会议>Conference on Quantum Dots, Nanoparticles, and Nanoclusters; 20040126-20040127; San Jose,CA; US >Carrier and Spin Dynamics in Charged Quantum Dots
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Carrier and Spin Dynamics in Charged Quantum Dots

机译：带电量子点中的载流子和自旋动力学

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摘要

Carrier and spin dynamics are measured in neutral, positively and negatively charged quantum dots using polarization-sensitive time-resolved photoluminescence. Carrier capture rates are observed to be strongly enhanced in charged quantum dots, suggesting that electron-hole scattering dominates this process. For positive quantum dots, the enhanced spin-polarized electron capture rate eliminates loss of electron spin information in the GaAs barriers prior to capture, resulting in strong circularly-polarized emission. Comparison of spin relaxation times in positively charged and neutral quantum dots reveals a negligible influence of the large built-in hole population, in contrast to measurements in higher-dimensional p-type semiconductors. The long spin lifetime, short capture time, and high radiative efficiency of the positively charged quantum dots indicates that these structures are superior to both quantum wells and neutral quantum dots for spin detection using a spin light-emitting diode.
机译：载流子和自旋动力学是使用偏振敏感的时间分辨光致发光在中性，带正电和带负电的量子点中测量的。观察到带电量子点中的载流子捕获速率大大提高，表明电子-空穴散射主导了这一过程。对于正量子点，增强的自旋极化电子捕获速率可消除捕获前GaAs势垒中电子自旋信息的损失，从而产生强的圆极化发射。与在高维p型半导体中进行测量相比，对带正电和中性量子点中自旋弛豫时间的比较显示出，内置的大空穴空穴的影响可以忽略不计。带正电的量子点的长自旋寿命，短捕获时间和高辐射效率表明，对于使用自旋发光二极管进行自旋检测，这些结构优于量子阱和中性量子点。

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