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首页> 外文会议>Society of Photo-Optical Instrumentation Engineers Conference on Quantum Dots, Nanoparticles, and Nanoclusters >Carrier and Spin Dynamics in Charged Quantum Dots
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Carrier and Spin Dynamics in Charged Quantum Dots

机译：带电量子点中的载体和旋转动力学

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摘要

Carrier and spin dynamics are measured in neutral, positively and negatively charged quantum dots using polarization-sensitive time-resolved photoluminescence. Carrier capture rates are observed to be strongly enhanced in charged quantum dots, suggesting that electron-hole scattering dominates this process. For positive quantum dots, the enhanced spin-polarized electron capture rate eliminates loss of electron spin information in the GaAs barriers prior to capture, resulting in strong circularly-polarized emission. Comparison of spin relaxation times in positively charged and neutral quantum dots reveals a negligible influence of the large built-in hole population, in contrast to measurements in higher-dimensional p-type semiconductors. The long spin lifetime, short capture time, and high radiative efficiency of the positively charged quantum dots indicates that these structures are superior to both quantum wells and neutral quantum dots for spin detection using a spin light-emitting diode.
机译：使用极化敏感的时间分辨的光致发光，在中性，正极和带负电量子点中测量载体和旋转动力学。观察到载波捕获速率在带电量子点中强烈增强，表明电子孔散射主导此过程。对于正量子点，增强的旋转偏振电子捕获率消除了在捕获之前在GaAs屏障中的电子自旋信息的损失，从而产生强烈的圆极化发射。与高维P型半导体中的测量相比，旋转弛豫时间在带正电荷和中性量子点中的旋转弛豫时间揭示了大型内置孔口的影响忽略不计。带正电荷量子点的长自旋寿命，短捕获时间和高辐射效率表示，这些结构优于使用旋转发光二极管的量子阱和中性量子点进行自旋检测。

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