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首页> 外文会议>Conference on quantum dots, particles, and nanoclusters VI; 20090125-28; San Jose, CA(US) >Morphological Change in Tip Based Nano-Patterned Planar InAs
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Morphological Change in Tip Based Nano-Patterned Planar InAs

机译：尖端基于纳米图案的平面InAs的形态变化

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摘要

The unique properties of quantum dots should allow enhanced or novel devices to be fabricated. However, the typical method of formation is to self-assemble quantum dots. This process causes quantum dots to have a distribution in properties such as size and to form at near random location. Since many of these possible devices require near exact positioning of the quantum dots with given sizes, most of these potential devices have been unrealized or exist in far from optimum conditions. In this work, we present a new method which is being examined for its potential to form uniform quantum dot structures. This technique is surface tension driven restructuring of a nano-patterned surface. In particular, we have formed a planar 5nm thick InAs film under metal rich conditions. The sample pattern was formed using a 3mg load measured with a Hysitron nano-indentor and maintained using STM scan electronics. The pattern consisted of a grid of 150 lines in x and y directions in nominal 9 μm × 9 μm square area. AFM analysis showed a series of lines which are spaced ～180 run lines apart in the y direction and lines spaced ～60 nm and 120 nm in the x-direction. The patterned sample was annealed under a high As flux, near 5 × 10~(-6) torr, after removal of the surface oxides. The resulting structure clearly shows the reorganization of the InAs in regions defined by the original patterning in AFM images. AFM analysis indicates large features with 80nm base width were formed.
机译：量子点的独特性质应允许制造增强的或新颖的器件。但是，典型的形成方法是自组装量子点。该过程导致量子点在诸如尺寸的性质中具有分布并且在几乎随机的位置处形成。由于许多这些可能的装置需要将给定尺寸的量子点精确定位，因此这些潜在装置中的大多数尚未实现或存在于远离最佳条件的位置。在这项工作中，我们提出了一种新方法，正在研究其形成均匀量子点结构的潜力。该技术是表面张力驱动的纳米图案表面的重组。特别地，我们在富金属条件下形成了平面的5nm厚的InAs膜。样品图案是通过使用Hysitron纳米压头测量的3mg负载形成的，并使用STM扫描电子设备进行维护。该图案由标称9μm×9μm正方形区域的x和y方向上的150条线的网格组成。原子力显微镜分析显示了一系列的线，它们在y方向上相距约180线，在x方向上相距约60 nm和120 nm。去除表面氧化物后，将图案化的样品在高As流量下接近5×10〜（-6）torr退火。最终的结构清楚地显示了AFM图像中原始图案所定义区域中InAs的重组。 AFM分析表明形成了具有80nm基极宽度的大特征。

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