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首页> 外文会议>SPIE Conference on Quantum dots, Particles, and Nanoclusters >Morphological Change in Tip Based Nano-Patterned Planar InAs
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Morphological Change in Tip Based Nano-Patterned Planar InAs

机译：基于尖纳米图案平面INA的形态变化

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摘要

The unique properties of quantum dots should allow enhanced or novel devices to be fabricated. However, the typical method of formation is to self-assemble quantum dots. This process causes quantum dots to have a distribution in properties such as size and to form at near random location. Since many of these possible devices require near exact positioning of the quantum dots with given sizes, most of these potential devices have been unrealized or exist in far from optimum conditions. In this work, we present a new method which is being examined for its potential to form uniform quantum dot structures. This technique is surface tension driven restructuring of a nano-patterned surface. In particular, we have formed a planar 5nm thick InAs film under metal rich conditions. The sample pattern was formed using a 3mg load measured with a Hysitron nano-indentor and maintained using STM scan electronics. The pattern consisted of a grid of 150 lines in x and y directions in nominal 9 μm x 9 μm square area. AFM analysis showed a series of lines which are spaced ～180 nm lines apart in the y direction and lines spaced –60 nm and 120 nm in the x-direction. The patterned sample was annealed under a high As flux, near 5 x 10~(-6) torr, after removal of the surface oxides. The resulting structure clearly shows the reorganization of the InAs in regions defined by the original patterning in AFM images. AFM analysis indicates large features with 80nm base width were formed.
机译：量子点的独特属性应允许制造增强或新颖的设备。然而，典型的形成方法是自组装量子点。该过程使量子点在诸如尺寸的特性中具有分布，并且在近随机位置形成。由于许多这些可能的装置需要具有给定尺寸的量子点的近精确定位，因此大多数这些潜在的装置都未介化或不存在于远离最佳条件。在这项工作中，我们介绍了一种新的方法，用于形成其形成均匀量子点结构的潜力。该技术是纳米图案表面的表面张力驱动的重构。特别是，我们在金属富含条件下形成了平面5nm厚的InAs膜。使用用Hysitron Nano-Indentor测量的3mg负载形成样品图案，并使用STM扫描电子器件保持。该模式包括在x和y方向上的150行的网格，在标称9μmx9μm平方区域。 AFM分析显示了一系列线，其在Y方向上分开〜180nm线，在x方向上间隔为-60nm和120nm。在除去表面氧化物之后，在高达助焊剂中，在高度助焊剂中退火图案化样品。所得到的结构清楚地显示了由AFM图像中原始图案化定义的区域中的INA的重组。 AFM分析表明形成了80nm基础宽度的大特征。

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