• 主题
高级搜索  >
历史搜索 清空历史
首页> 外文会议>Design, Fabrication, and Characterization of Photonic Devices >Blazed-grating couplers in unibond SOI
【24h】

Blazed-grating couplers in unibond SOI

机译：单键SOI中的闪光栅耦合器

获取原文
获取原文并翻译 | 示例
页面导航
  • 摘要
  • 著录项
  • 相似文献
  • 相关主题

摘要

Abstract: Grating couplers can be more efficient than end-fire coupling, in coupling light into a thin film waveguide. The aim of this work is to fabricate a low cost, highly efficient silicon waveguide grating coupler which is to be use data the telecommunication wavelength of 1.3 $mu@m. Silicon-on-insulator (SOI) is chosen for fabricating the gratings as it is low cost using the exiting silicon technology. Unibond wafers were used because they offer flexibility in the choice of the thickness' of both the silicon film and the buried oxide layer, and they have low optical waveguide loss. The wafers used in this work have a Si film thickness of 1.14 $mu@m and a SiO$-2$/ buried layer thickness of 0.67 $mu@m. Gratings that have asymmetrical profiles, such as blazed gratings are known to have higher directionality than the symmetrical rectangular gratings, and hence a higher output efficiency. Using perturbation theory, Si blazed gratings with an optimum grating height were predicted to have a maximum output efficiency of the order of 90 percent towards the substrate. The design and fabrication of the blazed gratings will be discussed in this paper. !20
机译：摘要：在将光耦合到薄膜波导中时，光栅耦合器比端射耦合更有效。这项工作的目的是制造一种低成本，高效率的硅波导光栅耦合器，该耦合器将被用作电信波长为1.3μm的数据。选择绝缘体上硅（SOI）来制造光栅，因为使用现有的硅技术成本低廉。使用单键晶片是因为它们在选择硅膜和掩埋氧化物层的厚度方面提供了灵活性，并且光波导损耗低。用于这项工作的晶片的硅膜厚度为1.14μm@ m，SiO $ -2 $ /埋层厚度为0.67μm@m。已知具有非对称轮廓的光栅（例如闪耀光栅）比对称矩形光栅具有更高的方向性，因此具有更高的输出效率。使用摄动理论，可以预测出具有最佳光栅高度的Si闪耀光栅对基板的最大输出效率约为90％。本文将讨论闪耀光栅的设计和制造。 ！20

著录项

相似文献

  • 外文文献
  • 中文文献
  • 专利
获取原文

客服邮箱：kefu@zhangqiaokeyan.com

京公网安备：11010802029741号 ICP备案号：京ICP备15016152号-6 六维联合信息科技 (北京) 有限公司©版权所有

  • 客服微信

  • 服务号