Process, Design and Optical Proximity Correction Requirements for the 65nm Device Generation

机译：65nm器件产生的工艺，设计和光学接近度校正要求

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The 65nm device generation will require steady improvements in lithography scanners, resists, reticles and OPC technology. 193nm high NA scanners and illumination can provide the desired dense feature resolution, but achieving the stringent overall 65nm logic product requirements necessitates a more coherent strategy of reticle, process, OPC, and design methods than was required for previous generations. This required integrated patterning solution strategy will have a fundamental impact on the relationship between design and process functions at the 65nm device node.

机译：65nm器件的产生将需要在光刻扫描仪，抗蚀剂，掩模版和OPC技术方面进行稳步改进。 193nm高NA扫描仪和照明可以提供所需的密集特征分辨率，但是要达到严格的65nm逻辑产品整体要求，就必须有比前几代产品更协调的标线，工艺，OPC和设计方法。这种所需的集成式构图解决方案策略将对65nm器件节点上的设计和工艺功能之间的关系产生根本影响。

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来源
《Design and Process Integration for Microelectronic Manufacturing II》|2003年|p.353-364|共12页
会议地点 Santa Clara CA(US)
作者
Kevin Lucas; Patrick Montgomery; Lloyd Litt; Will Conley; Sergei Postnikov; Wei Wu; Chi-Min Yuan; Marc Olivares; Kirk Strozewski; Rusty Carter; Jim Vasek; David Smith; Eric Fanucchi; Vincent Wiaux; Geert Vandenberghe; Olivier Toublan; Arjan Verhappen;
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Motorola Advanced Products Research and Development Lab, Austin, TX;

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原文格式 PDF
正文语种 eng
中图分类无线电电子学、电信技术;
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1. Restricted Optical Proximity Effect Correction Pattern Generation Based on Optical Proximity Effect Correction-Design for Manufacturability Rule in Model-Based Optical Proximity Effect Correction [J] . Katsuhiko Harazaki, Tasuku Yoshioka, Kiyoshige Ohmori, Japanese Journal of Applied Physics. Part 1, Regular Papers, Brief Communications & Review Papers . 2007,第9BPt1期

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2. Improvement of optical proximity-effect correction model accuracy by hybrid optical proximity-effect correction modeling and shrink correction technique for 10-nm node process [J] . Keiichiro Hitomi, Scott Halle, Marshal Miller, Journal of microanolithography, MEMS, and MOEMS . 2016,第3期

机译：通过10nm节点工艺的混合光学邻近效应校正建模和收缩校正技术提高光学邻近效应校正模型的准确性
3. Double-patterning interactions with wafer processing, optical proximity correction, and physical design flows [J] . Kevin Lucas Christopher Cork Alexander Miloslavsky Gerard Luk-Pat Levi Barnes John Hapli John Lewellen Greg Rollins Vincent Wiaux and Staf Verhaegen Journal of Micro/Nanolithography,MEMS and MOEMS . 2009,第3期

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4. Process, Design and Optical Proximity Correction Requirements for the 65nm Device Generation [C] . Kevin Lucas, Patrick Montgomery, Lloyd Litt, Optical Microlithography XVI . 2003

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Process, Design and Optical Proximity Correction Requirements for the 65nm Device Generation

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