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Trends in systematic non-particle yield loss mechanisms and the implication for IC design

机译：系统性非粒子良率损失机制的趋势及其对IC设计的启示

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Semiconductor industry yield trends from the 500 nm generation through the 180 nm generation are described that illustrate traditional random defect yield loss mechanisms have been found to be less and less important relative to the yield loss caused by systematic and primarily non-particle mechanisms as semiconductor processes have moved to sub-wavelength lithography. While part of the reason for this is the continued particulate defect reduction success due to better equipment and fab procedures, a more important reason is the increase in systematic mechanisms driven in large part by the rapidly increasing process complexity and decreasing process parameter "windows" required as processes moved through the generations. In this paper these yield loss trends are reviewed and projected to the 130nm and beyond technology nodes, and the implications for effective IC design and design methodology discussed.
机译：描述了从500 nm一代到180 nm一代的半导体行业良率趋势，表明传统的随机缺陷良率损失机制相对于系统化的，主要是非颗粒机制的半导体制程所引起的良率损失越来越不重要已经转向亚波长光刻。虽然部分原因是由于更好的设备和Fab程序使微粒缺陷减少持续成功，但更重要的原因是系统机制的增加很大程度上是由快速增加的工艺复杂性和所需的工艺参数“窗口”减少所致历代传承的过程。本文对这些良率损失趋势进行了回顾，并将其预测到了130nm及以后的技术节点，并讨论了对有效IC设计和设计方法的影响。

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