• 主题
高级搜索  >
历史搜索 清空历史
首页> 外文会议>Device packaging 2010 >Integration Aspects of the Implementation of Through Silicon Vias (TSV) for CMOS Image Sensors
【24h】

Integration Aspects of the Implementation of Through Silicon Vias (TSV) for CMOS Image Sensors

机译：CMOS图像传感器的硅通孔（TSV）实现的集成方面

获取原文
获取原文并翻译 | 示例
页面导航
  • 摘要
  • 著录项
  • 相似文献
  • 相关主题

摘要

One of the first device types to benefit from TSV implementation is the CMOS imagernsensor, an image capture device designed to combine high image quality within arncompact form-factor that can be mass produced at low cost. End markets include mobilernphones, PDAs and gaming consoles.rnSTMicroelectronics is pioneering their production, based on ≤65nm CMOS technology,rnat its 300mm facility in Crolles. These sensors employ TSVs as part of a wafer levelrnpackage allowing the camera module to be directly soldered to a phone PCB therebyrnsaving cost, space and time to manufacture. SPTS’s Versalis fxP system is being used torncombine multiple TSV formation processes onto one platform including hard-maskrndeposition, hard-mask etching, TSV etching, partial PMD etching, dielectric linerrndeposition and spacer etching to define the area for the metal contact. All processes arerncarried out on a silicon wafer bonded to a glass carrier, through which the final device isrnilluminated.rnWe will present a TSV silicon etch process for 70 μm x 70 μm Vias in a thinned 300mmrnsilicon wafer on glass carriers with an etch rate uniformity of ≤±1% and sidewallrnscalloping in the range 80-210 nm. We will show that this process can be convenientlyrnmixed in production with the various oxide etches. A PECVD dielectric liner depositedrnat <200 °C having excellent coverage, thermal stability and adhesion combined with arnbreakdown voltage >8 MVcm-1 and leakage current <1E-7 Acm-2 will also be described.rnProcess integration aspects will be discussed using high resolution SEMS to show the keyrnmaterial interfaces in critical areas such as feature corners and along sidewalls.rnFurthermore the successful implementation of TSV technology on ST’s CMOS imagernsensors will be demonstrated through a combination of electrical characteristics,rnparametric device data and overall device performance/reliability.
机译：受益于TSV实施的首批设备类型之一是CMOS图像传感器，它是一种图像捕捉设备，旨在将高质量的图像质量结合在紧凑的尺寸因数中，从而可以低成本大量生产。终端市场包括手机，PDA和游戏机。rnSTMicroelectronics在Crolles的300mm工厂中，基于≤65nmCMOS技术，正在率先生产它们。这些传感器采用TSV作为晶圆级封装的一部分，从而允许将摄像头模块直接焊接到电话PCB上，从而节省了成本，空间和制造时间。 SPTS的Versalis fxP系统用于将多个TSV形成工艺组合到一个平台上，包括硬掩模沉积，硬掩模蚀刻，TSV蚀刻，部分PMD蚀刻，电介质衬里沉积和间隔物蚀刻，以定义金属接触区域。所有工艺都在粘结到玻璃载体的硅晶片上进行，最终器件通过该硅晶片被照亮。我们将介绍在玻璃载体上减薄的300mm硅晶片中对70μmx 70μm通孔的TSV硅蚀刻工艺，蚀刻速率均匀性为≤±1％，侧壁扇形在80-210 nm范围内。我们将证明该工艺可以方便地在生产中与各种氧化物蚀刻剂混合。还描述了在200°C以下沉积的PECVD介电衬里，该衬里具有优异的覆盖率，热稳定性和粘附性，并结合了击穿电压> 8 MVcm-1和漏电流<1E-7 Acm-2.rn将使用高分辨率讨论工艺集成方面SEMS可以显示关键区域（例如特征拐角和侧壁）中的关键材料界面。此外，将结合电学特性，参量器件数据和整体器件性能/可靠性，论证TSV技术在ST CMOS图像传感器上的成功实施。

著录项

  • 来源
    《Device packaging 2010》|2010年|p.1|共1页
  • 会议地点 Scottsdale/Fountain Hills AZ(US)
  • 作者

    Dave Thomas; Jean Michailos; Nicolas Hotellier; Gilles Metellus; Francois Guyader; rnAlain Inard; Keith Buchanan; Dorleta Cortaberria Sanz; Yiping Song; Tony Wilby;

  • 作者单位

    SPP Process Technology Systems (SPTS)rnRingland WayrnNewport, Gwent NP442NBrnUKrnP: +44 1633 414027rnE: dave.thomas@aviza.com;

    SPP Process Technology Systems (SPTS)rnRingland WayrnNewport, Gwent NP442NBrnUK;

    SPP Process Technology Systems (SPTS)rnRingland WayrnNewport, Gwent NP442NBrnUK;

    SPP Process Technology Systems (SPTS)rnRingland WayrnNewport, Gwent NP442NBrnUK;

    SPP Process Technology Systems (SPTS)rnRingland WayrnNewport, Gwent NP442NBrnUK;

    SPP Process Technology Systems (SPTS)rnRingland WayrnNewport, Gwent NP442NBrnUK;

    SPP Process Technology Systems (SPTS)rnRingland WayrnNewport, Gwent NP442NBrnUK;

    SPP Process Technology Systems (SPTS)rnRingland WayrnNewport, Gwent NP442NBrnUK;

    SPP Process Technology Systems (SPTS)rnRingland WayrnNewport, Gwent NP442NBrnUK;

    SPP Process Technology Systems (SPTS)rnRingland WayrnNewport, Gwent NP442NBrnUK;

  • 会议组织
  • 原文格式 PDF
  • 正文语种 eng
  • 中图分类 制造工艺;
  • 关键词

相似文献

  • 外文文献
  • 中文文献
  • 专利
获取原文

客服邮箱：kefu@zhangqiaokeyan.com

京公网安备：11010802029741号 ICP备案号：京ICP备15016152号-6 六维联合信息科技 (北京) 有限公司©版权所有

  • 客服微信

  • 服务号